Unlock instant, AI-driven research and patent intelligence for your innovation.

Structure and method for reducing source and drain resistance

A source and drain area technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problem of increased source and drain contact resistance, and achieve the effect of reduced contact resistance and increased contact area

Active Publication Date: 2019-11-01
SHANGHAI HUALI MICROELECTRONICS CORP
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, as the feature size of transistors decreases, the contact area of ​​the source and drain continues to decrease, resulting in an increase in the source and drain contact resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure and method for reducing source and drain resistance
  • Structure and method for reducing source and drain resistance
  • Structure and method for reducing source and drain resistance

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In the following description, the present invention is described with reference to various examples. One skilled in the art will recognize, however, that the various embodiments may be practiced without one or more of the specific details, or with other alternative and / or additional methods, materials, or components. In other instances, well-known structures, materials, or operations are not shown or described in detail so as not to obscure aspects of the various embodiments of the invention. Similarly, for purposes of explanation, specific quantities, materials and configurations are set forth in order to provide a thorough understanding of embodiments of the invention. However, the invention may be practiced without these specific details. Furthermore, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn to scale.

[0029] In order to increase the contact area of ​​the source and dr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention discloses a method for reducing a source-drain resistance. Through the method, the resistance of a source-drain region can be effectively reduced. The method comprises the steps of: forming a grid, a source-drain region, and a side wall on a substrate; forming a first side wall hard mask at the outer side of the side wall; forming a semiconductor layer on the source-drain region; forming a second side wall hard mask at the outer side of the first side wall hard mask; etching the semiconductor layer by using the second side wall hard mask as a mask layer; and removing the first side wall hard mask and the second side wall hard mask, so as to form a projection structure separated from the grid on the source-drain region.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a structure and method for reducing source-drain resistance. Background technique [0002] With the rapid development of nanofabrication technology, the feature size of transistors has entered the nanoscale. Improving the performance of current mainstream silicon CMOS devices by scaling down is subject to more and more physical and technological limitations. In order to enable integrated circuit technology to continue the development speed revealed by Moore's Law, new materials, new structures and new properties compatible with silicon technology must be developed. [0003] figure 1 A cross-sectional view of a metal silicide formed on a device in the prior art is shown. Such as figure 1 As shown, a metal silicide film 112 covers the gate 106 and the source and drain regions 110 . These metal silicide films 110 are formed using a self-aligned process. First, a laye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/336
Inventor 鲍宇周军朱亚丹曾真
Owner SHANGHAI HUALI MICROELECTRONICS CORP