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mim capacitor and its formation method

A capacitor and electrode layer technology, applied in the direction of circuits, electrical components, electrical solid devices, etc., can solve the problems of dielectric layer uplift, MIM capacitor reliability reduction, etc., and achieve the effect of improving stability and reliability

Active Publication Date: 2018-09-07
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The existing production of MIM capacitors needs to increase the corresponding structure, and then use the dielectric layer to cover the MIM capacitor, but the surface of the dielectric layer will appear bumps
There will be bulges on the surface of the dielectric layer, which will further cause the photoresist used to remain on the dielectric layer when the dielectric layer is etched to form a contact hole, and cause the dielectric layer to be damaged when the metal layer is planarized after the contact hole is filled with metal. Residual metal on the upper surface of the layer, which eventually leads to reduced reliability of the MIM capacitor

Method used

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  • mim capacitor and its formation method

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Embodiment Construction

[0044] As mentioned in the background technology, in the existing method, when the MIM capacitor is formed, the surface of the dielectric layer will have bumps. For details, please refer to Figure 1 to Figure 4 .

[0045] Please refer to figure 1 , providing a semiconductor substrate (not shown) with a front-end device layer 101 on the semiconductor substrate. The front-end device layer 101 has structures such as plugs (not marked) and interconnect lines (not marked).

[0046] Please continue to refer figure 1 , form an etching stop layer 111 on the front-end device layer 101 and the interconnection line, form a first electrode layer 113 on the etching stop layer 111, form a dielectric layer 115 on the first electrode layer 113, and form a dielectric layer 115 on the dielectric layer 115 The second electrode layer 117 , a bottom anti-reflection layer 119 is formed on the second electrode layer 117 , and a patterned photoresist layer 121 is formed on the bottom anti-reflec...

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Abstract

The invention provides a metal-insulator-metal (MIM) capacitor and a formation method thereof. The formation method comprises: a semiconductor substrate having a front-end device layer is provided; a first dielectric layer is formed on the front-end device layer; a groove is formed in the first dielectric layer; a first electrode layer is formed on the inner wall of the groove and the upper surface of the first dielectric layer; a second electric layer is formed on the first electrode layer; a second electrode layer is formed on the second electric layer; and after formation of the second electrode layer, planarization processing is carried out. With the formation method, reliability of formed MIM capacitor can be improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a MIM capacitor and a forming method thereof. Background technique [0002] With the continuous improvement of the manufacturing technology of semiconductor integrated circuits, the performance of semiconductor devices is continuously improved, and the process of device miniaturization and miniaturization is also accompanied by the continuous improvement. Capacitor structure is an important component of integrated circuits. There are various capacitor structures in integrated circuit chips, such as: MOS (metal-oxide-semiconductor field metal-oxide-semiconductor) field effect tube capacitance; PIP (polysilicon-insulator-polysilicon Polysilicon-insulator-polysilicon) capacitance, variable junction capacitance and MIM (metal-insulator-metal metal-insulator-metal) capacitance and MOM (metal-oxide-metal metal-oxide-metal) capacitance in the back-end interconnection. [0003...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/64H01L21/02
Inventor 张京晶
Owner SEMICON MFG INT (SHANGHAI) CORP