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Device and method for growing large-size single crystal by dynamic temperature gradient method

A temperature gradient method, large-scale technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problems of difficult temperature gradient control, poor crystal integrity, low yield, etc., to achieve large size, high yield, complete good sex effect

Active Publication Date: 2018-05-11
南京光宝光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To obtain high-quality crystals, it is required to avoid vibration during the growth process as much as possible, and the crucible descent method will inevitably cause disturbance to the melt, and at the same time, the temperature gradient during the crystal growth process of this method is also difficult to control
The crystals grown by the above two methods have poor integrity, severe grain boundaries, small size, and low yield

Method used

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  • Device and method for growing large-size single crystal by dynamic temperature gradient method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Growth of large size MgF by a dynamic temperature gradient method 2 The single crystal method includes the following steps:

[0024] a. MgF 2 The seed crystal is put into the seed crystal tank at the bottom of the inner cavity of the crucible 7, and the polycrystalline MgF with a purity greater than 99.99% 2 The raw material is put into the crucible 7, and the crucible 7 is put into the complete insulation screen composed of the circumferential insulation screen 1, the top insulation screen 2, the bottom insulation screen 3 and the center insulation screen 4, and the complete insulation screen is put into the single crystal furnace and Vacuum the single crystal furnace;

[0025] b. Start the central control system so that the heating element 8 can heat up the single crystal furnace. The heating rate is set to 10~15°C / h. Protective gas (such as N 2 or Ar), raise the temperature of the growth furnace to 20-50°C above the growth temperature required for the crystal, an...

Embodiment 2

[0033] Growth of large size CaF by a dynamic temperature gradient method 2 The single crystal method includes the following steps:

[0034] a. CaF 2 The seed crystal is put into the seed crystal tank at the bottom of the inner cavity of the crucible 7, and the polycrystalline CaF with a purity greater than 99.99% 2 The raw material is put into the crucible 7, and the crucible 7 is put into the complete insulation screen composed of the circumferential insulation screen 1, the top insulation screen 2, the bottom insulation screen 3 and the center insulation screen 4, and the complete insulation screen is put into the single crystal furnace and Vacuum the single crystal furnace;

[0035] b. Start the central control system so that the heating element 8 can heat up the single crystal furnace. The heating rate is set to 10~15°C / h. Protective gas (such as N 2 or Ar), raise the temperature of the growth furnace to 20-50°C above the growth temperature required for the crystal, an...

Embodiment 3

[0043] A device for growing large-scale YAG single crystals by a dynamic temperature gradient method comprises the following steps:

[0044] a. Put the YAG seed crystal into the seed crystal groove at the bottom of the inner cavity of the crucible 7, put the polycrystalline YAG raw material with a purity greater than 99.99% into the crucible 7, and put the crucible 7 into the circumferential insulation screen 1 and the top insulation screen 2 , the bottom insulation screen 3 and the complete insulation screen formed by the center insulation screen 4, put the complete insulation screen into the single crystal furnace and evacuate the single crystal furnace;

[0045] b. Start the central control system so that the heating element 8 can heat up the single crystal furnace. The heating rate is set to 10~15°C / h. Protective gas (such as N 2 or Ar), raise the temperature of the growth furnace to 20-50°C above the growth temperature required for the crystal, and then keep the temperat...

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Abstract

The invention discloses a device and method for growing large-size single crystals through a dynamic temperature gradient method. According to the device for growing large-size single crystals through the dynamic temperature gradient method, a top heat-preserving screen is fixed to the top end of a circumferential heat-preserving screen; an annular bottom heat-preserving screen is fixed to the bottom end of the circumferential heat-preserving screen; a center heat-preserving screen is installed in the bottom heat-preserving screen in a sliding seal mode; center heat-preserving screen lifting power is installed at the bottom end of the center heat-preserving screen; a crucible rod is fixed in a single-crystal furnace, a bottom thermocouple is fixed in the crucible rod, a crucible is fixed to the top end of the crucible rod, a heating body is fixed outside the crucible, and a top thermocouple is fixed to the top heat-preserving screen. The device can be used for growing the single crystals which are good in growing integrity, free of bubbles and envelopes, large in size and high in rate of finished products. The device has the advantages of being simple and compact in structure, convenient to use and the like. By means of the device and method, the temperature gradient in the growing process of the crystals can be dynamically and accurately controlled.

Description

technical field [0001] The invention discloses a device for growing a large-size single crystal by a dynamic temperature gradient method, and also discloses a method for growing a large-size single crystal by a dynamic temperature gradient method. Background technique [0002] In the prior art, single crystals such as YAG series, fluoride series, and gemstone series are grown by the pulling method or the crucible drop method. The pulling method is heated by induction, and it needs to go through operations such as seeding, necking, and equal diameter. Larger and more defects, and unable to grow large-sized crystals; the crucible descending method is to gradually lower a vertically placed crucible so that it passes through a temperature gradient zone (the temperature is high and the temperature is low), and the melt solidifies from bottom to top. Through the relative movement between the crucible and the melt, a certain temperature field is formed to make the crystal grow. T...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B11/02C30B29/12C30B29/22
CPCC30B11/003C30B11/02C30B29/12C30B29/22
Inventor 董永军华伟陈伟
Owner 南京光宝光电科技有限公司
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