A method for rapid and continuous preparation of large domain graphene films

A graphene film and crystal domain technology, which is applied in the field of rapid and continuous preparation of large crystal domain graphene films, can solve the problems of slow growth of graphene films, energy consumption, gas consumption, and cost increase, and achieve good application prospects and reduce Production cost and effect of fewer defects

Active Publication Date: 2018-07-10
PEKING UNIV
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Problems solved by technology

However, due to the limitation of carbon source supply in this method, the growth rate of graphene film is extremely slow, and the long-term high-temperature growth brings a lot of energy consumption and gas consumption, which greatly increases the cost.

Method used

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  • A method for rapid and continuous preparation of large domain graphene films
  • A method for rapid and continuous preparation of large domain graphene films
  • A method for rapid and continuous preparation of large domain graphene films

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Embodiment approach 1

[0043] Embodiment 1: A method for rapid and continuous preparation of large domain graphene films

[0044] This embodiment is in figure 1 In the setup shown, a metal foil is placed in an oxide substrate sandwich, figure 1 Among them are two metal foils and three oxide substrates, and proceed as follows:

[0045] (1) Place the metal foil without any surface treatment in the interlayer of the oxide substrate, put it into the chemical vapor deposition equipment, feed Ar, the flow rate is more than 300 sccm, and then start to heat up, and the heating process lasts for 50~ 70min;

[0046] (2) When the temperature rises to 900~1100℃, H 2 Gas, H 2 The flow rate is 0.2-50sccm, the Ar flow rate remains unchanged, and CH is started to be introduced at the same time 4 gas, CH 4 The flow rate is 0.5~50sccm;

[0047] (3) Simultaneously control the driving device to slowly move the runners at both ends, so that multiple metal foils pass slowly through the oxide plate interlayer at th...

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Abstract

The invention provides a method for quickly and continuously preparing a large-crystal-domain graphene film, and relates to a preparation method for the large-crystal-domain graphene film. The method is mainly characterized by comprising the steps of by using a metal foil as a catalyst and a growth substrate, and using oxide as a substrate, enabling the metal foil to penetrate through an interlayer of the oxide substrate; and then quickly and continuously obtaining the large-crystal-domain and high-quality graphene film through rotational devices at two ends with a normal-pressure chemical vapor deposition (CVD) method. According to the method provided by the invention, the technical problems of small crystal domain, poor electric performance, complicated substrate surface treatment process, long growth cycle and the like of a graphene film prepared with the CVD method are solved; and with the very simple method, a large-crystal-domain graphene film sample is quickly and continuously prepared.

Description

technical field [0001] The invention relates to a method for rapidly and continuously preparing graphene films with large crystal domains. Background technique [0002] Graphene is a two-dimensional honeycomb structure formed by densely packing a single layer of carbon atoms, and is the basic unit of carbonaceous materials in other dimensions. Graphene's unique crystal structure endows it with a series of novel physical properties. The valence band and conduction band of graphene intersect at the six vertices of the Fermi level. It is a zero-band gap material, and its energy band structure is linear near the Fermi level. is zero, so graphene has ultra-high carrier mobility (its carrier mobility can theoretically reach up to 200 000 cm 2 V -1 the s -1 , 100 times higher than silicon), and this carrier transport performance is minimally affected by temperature. It is this unique property that makes graphene the most likely material to replace silicon in today's microelect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/18C30B29/02
CPCC30B25/18C30B29/02
Inventor 张智宏徐小志俞大鹏王恩哥刘开辉
Owner PEKING UNIV
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