A method and device for rapidly and continuously preparing ultra-large single crystal thin films

Abstract

The invention provides a method and device for rapidly and continuously preparing an ultra-large single crystal thin film, and relates to a preparation method of the ultra-large single crystal thin film. The method comprises the following steps that a raw material (such as a metal foil) or a required high-temperature resistance substrate is placed in a high-temperature resistance isolation supportand is placed on a local high-temperature heating body, then a normal-pressure chemical or physical vapor deposition method is used, local high-temperature heating is used, and the principle of driving a single small crystal domain or nucleation site to grow up at a high temperature in a non-molten state is used, and high-quality ultra-large single crystal thin films are directly obtained or continuously obtained on the surfaces of various high-temperature resistance substrates through rotating devices at both ends. The method for rapidly and continuously preparing the ultra-large single crystal thin film solves the technical problems that energy consumption is high, process is complex, equipment is expensive, performance is greatly reduced caused by limited size and low quality of the prepared single crystal thin film, and the like of the single crystal thin film prepared by an traditional method, and realizes rapid and continuous preparation of high-quality ultra-large single crystal thin film samples through a very simple method.

Description

technical field [0001] The invention relates to a method and device for rapidly and continuously preparing ultra-large single-crystal thin films. Background technique [0002] Since Geim et al. obtained graphene by mechanical exfoliation and revealed its unique physical properties in 2004, the research on graphene has been a hot spot in the field of condensed matter physics and materials. The rise of graphene has also led to an upsurge in the research of other two-dimensional materials. The two-dimensional material samples obtained by the mechanical exfoliation method have few defects and high quality, which can satisfy the research on the basic physical properties of materials. However, this method can only obtain small-sized samples, and the output is extremely low, the efficiency is low, and the repeatability is poor, so it is not suitable for the industrial application of two-dimensional materials. Among the existing two-dimensional material preparation methods, the ch...

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Problems solved by technology

However, the above method has high energy consumption, complex processing technology, high production cost, and inevitably introduces defects such as segregation, pores, shrinkage cavities, inclusions, and dislocation grain boundaries during mechanical processing, which reduces the quality of the film. and mechanical properties

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