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A preparation method of sub-10 nanometer stable graphene quantum dots

A graphene quantum dot and nano technology, applied in the direction of nano technology, metal material coating process, coating, etc., can solve the problem that the scale of quantum graphene is far apart, and achieve shortened growth cycle, stable performance and good stability Effect

Active Publication Date: 2020-11-03
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the size of the horizontal heterojunction of graphene and boron nitride is generally above 100 nanometers, which is still far from the scale of quantum graphene.

Method used

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  • A preparation method of sub-10 nanometer stable graphene quantum dots
  • A preparation method of sub-10 nanometer stable graphene quantum dots
  • A preparation method of sub-10 nanometer stable graphene quantum dots

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0032] Embodiment 1: A method for growing graphene quantum dots in boron nitride nanopores

[0033] This embodiment is in figure 1 In the device shown, the bulk boron nitride is torn off by hand with adhesive tape and a few layers of boron nitride are placed on the metal foil, and the steps are as follows:

[0034] 1. Tear off the bulk boron nitride with tape and peel off a few layers of boron nitride onto the metal foil, and put it into a chemical vapor deposition equipment for annealing (this step is mainly to remove the tape residue). into Ar / H 2 =500 / 10sccm, the working pressure is normal pressure (that is, one atmospheric pressure or about 1×10 5 Pa), then start to heat up, the heating process lasts for 50-70min, stop heating after reaching 1000°C, and cool down to room temperature naturally;

[0035] 2. Take out the sample and put it into the cavity of the helium ion microscope, and use the helium ion beam to etch nano-holes of different sizes on the boron nitride, an...

Embodiment approach 2

[0051] Embodiment 2: A method for growing graphene quantum dots in boron nitride nanopores by chemical vapor deposition

[0052] This embodiment is in figure 1 In the setup shown, boron nitride was grown on top of a metal foil by chemical vapor deposition and proceeded as follows:

[0053] 1. Put the metal foil in the chemical vapor deposition equipment. into Ar / H 2 =500 / 5sccm, the working pressure is normal pressure (that is, one atmospheric pressure or about 1×10 5 Pa), and then start to heat up. The heating process lasts for 50-70 minutes. After reaching 1000°C, heat the BH 3 -NH 3 Pass the boron source and nitrogen source, after one hour, stop heating BH 3 -NH 3 , naturally cooled to room temperature;

[0054] 2. Take out the sample and put it into the cavity of the helium ion microscope, and use the helium ion beam to etch nano-holes of different sizes on the boron nitride, and the dose and etching time can be selected according to the state of the instrument;

[...

Embodiment approach 3

[0069] Embodiment 3: Stability analysis of a sub-10nm graphene quantum dot

[0070] Test three: the verification of the stability of a sub-10nm stable graphene quantum dot in this test is carried out according to the following steps:

[0071] 1. Purchase commercial graphene quantum dots as a comparison;

[0072] 2. Test the changes of the Raman spectrum and fluorescence spectrum of the purchased graphene quantum dots baked at different temperatures for different times;

[0073] 3. Test the Raman spectrum of the graphene quantum dots grown in this patent over time;

[0074] 4. The comparison results show that the purchased commercial graphene quantum dots are baked at 100°C for 5 minutes, the Raman spectrum disappears, and the fluorescence spectrum attenuates seriously. The fluorescence basically disappeared after 10 minutes. However, the graphene quantum dots applied for in this patent are baked under the same conditions for 100 days, and the graphene Raman spectrum does no...

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Abstract

The invention provides a preparation method of a sub-10 nanometer stable graphene quantum dot, and relates to a boron nitride preparation method, helium ion microscope processing and graphene chemicalvapor deposition growth. The method is mainly characterized in that boron nitride is placed on a metal foil substrate, a sub-10 nano hole is etched on the boron nitride through the helium ion microscope, and then the graphene quantum dot is grown in the boron nitride nano hole by using a chemical vapor deposition method. According to the method, the technical and scientific problems that the geometric size and the position of the graphene quantum dot cannot be effectively controlled, and the stability is poor are solved, the method of helium ion processing assisted growth is adopted, so thatthe preparation of the highly controllable sub-10 nanometer stable graphene quantum dot is realized.

Description

technical field [0001] The invention relates to a preparation method of sub-10 nanometer stable graphene quantum dots. Background technique [0002] Graphene is a two-dimensional honeycomb monoatomic layer graphite composed of carbon atoms, and graphene quantum dots are graphene fragments whose dimensions in three dimensions reach the nanometer level. Graphene itself is a semi-metallic material with zero band gap, and graphene quantum dots, especially sub-10nm graphene quantum dots, can not only open the band gap of graphene, but also have Klein tunneling and valley splitting. Interesting quantum phenomena such as cracking. These phenomena have further opened up a large application space for graphene quantum dots, such as graphene quantum dot LED display, quantum computing, etc., and can even be used to treat Parkinson's disease. However, graphene quantum dots, especially sub-10nm graphene quantum dots, have a large proportion of edge atoms. The existence of edge atom dang...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/26C23C16/02C23C16/34B82Y40/00
CPCB82Y40/00C23C16/0245C23C16/26C23C16/342
Inventor 刘开辉陈东学乔瑞喜俞大鹏
Owner PEKING UNIV
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