A method for preparing a large-scale two-dimensional single crystal stack with interlayer corners

Abstract

The invention provides a method for preparing a large-scale two-dimensional single crystal material stack with interlayer corners, and relates to a method for preparing corner graphene and other two-dimensional single crystal stacks with specific corners. Its main feature is to stack single crystal substrates and rotate them at a specific angle, and epitaxial two-dimensional single crystal materials on the surface, then bond the upper and lower two-dimensional single crystal materials, and remove the surface layer of single crystal substrates. Obtain 2D single crystal stacks with specific corners. The method proposed by the invention solves the problems of unclean interface, small stack size, complicated operation and the like when preparing the corner two-dimensional stack. Through a very simple method, the rapid preparation of large-scale two-dimensional single crystal stacks with controllable rotation angles is realized.

Description

A method for preparing large-scale two-dimensional single-crystal stacks with interlayer corners technical field The present invention relates to material technology field, be specifically related to a kind of large-scale two-dimensional single crystal lamination with interlayer corner. Preparation. Background technique [0002] There are many kinds of two-dimensional materials, covering a rich system of conductors, semiconductors, insulators, magnets, etc. due to its atoms Both electrons and electrons are confined to a two-dimensional plane, and two-dimensional materials exhibit many peculiar properties. Taking graphene as an example, due to its Unique structure and atomic bonding, single crystal graphene has a series of excellent properties, including extremely high mechanical strength with toughness, good light transmission, and the highest carrier mobility and saturation current density and highest thermal guide etc. Therefore, two-dimensional materials have g...

AI Technical Summary

Problems solved by technology

These methods usually have a series of problems such as complex operation, low yield, and harsh conditions, and inevitably expose the surface of the material to the external environment, resulting in the inability to obtain a clean contact surface with large area and strong interaction.

In principle, direct growth of stacked structures is the most ideal method for constructing clean 2D stacked structures, however, direct growth of large-size corner-specific 2D single crystal stacks with controllable corners is extremely challenging.

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