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Data access method, memory control circuit unit and memory storage device

A technology for data access and control circuits, which is applied in the direction of error detection of redundant codes, input/output to record carriers, generation of response errors, etc., and can solve problems such as data cannot be corrected, data loss, etc.

Active Publication Date: 2018-11-02
PHISON ELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, when the number of erroneous bits in the data exceeds the number of erroneous bits that can be detected and corrected by the ECC circuit, the data containing the erroneous bits cannot be corrected, resulting in data loss

Method used

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  • Data access method, memory control circuit unit and memory storage device
  • Data access method, memory control circuit unit and memory storage device
  • Data access method, memory control circuit unit and memory storage device

Examples

Experimental program
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Embodiment Construction

[0116] First Exemplary Embodiment

[0117] In general, a memory storage device (also called a memory storage system) includes a rewritable non-volatile memory component and a controller (also called a control circuit). Typically memory storage devices are used with a host system so that the host system can write data to or read data from the memory storage device.

[0118] Figure 1A It is a schematic diagram of a host system and a memory storage device according to the first exemplary embodiment.

[0119] Please refer to Figure 1A , the host system 1000 generally includes a computer 1100 and an input / output (input / output, referred to as: I / O) device 1106 . The computer 1100 includes a microprocessor 1102 , a random access memory (random access memory, RAM for short) 1104 , a system bus 1108 and a data transmission interface 1110 . The input / output device 1106 includes such as Figure 1B mouse 1202, keyboard 1204, monitor 1206 and printer 1208. It is important to understa...

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Abstract

The invention provides a data access method for a rewritable non-volatile memory assembly, a memory control circuit unit and a memory storage device. The method includes: filling virtual data into first data to generate second data; writing the second data and an error checking and correcting code corresponding to the second data into a first entity programming unit; reading a data string from the first entity programming unit, wherein the data string includes third data and the error checking and correcting code; adjusting the third data to generate fourth data according to a pattern of the virtual data when the third data cannot be corrected through the error checking and correcting code, and using the error checking and correcting code to correct the fourth data to obtain corrected data, wherein the corrected data is identical to the second data.

Description

technical field [0001] The present invention relates to a data access method, and in particular to a data access method for a rewritable non-volatile memory component, a memory control circuit unit and a memory storage device. Background technique [0002] The rapid growth of digital cameras, mobile phones, and MP3 players has led to a rapid increase in consumer demand for storage media. Since rewritable non-volatile memory (rewritable non-volatile memory) has the characteristics of non-volatile data, power saving, small size, no mechanical structure, and fast read and write speed, it is most suitable for portable electronic products, such as notebooks computer. A solid state drive is a storage device that uses flash memory as a storage medium. Therefore, the flash memory industry has become a very popular part of the electronics industry in recent years. [0003] Because the data stored in the rewritable non-volatile memory may have error bits due to various factors (suc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F11/10G06F3/06
Inventor 叶志刚
Owner PHISON ELECTRONICS