Power diode for improving dynamic snow slide resistance

Abstract

The invention relates to a power diode for improving dynamic snow slide resistance. The power diode comprises a semiconductor substrate and a first conduction type base region located in the semiconductor substrate, wherein a cathode region for forming a cathode is arranged on the back side of the semiconductor substrate, an anode region for forming an anode is arranged on the front side of the semiconductor substrate, a super-junction structure formed by a plurality of first conduction type columns and a plurality of second conduction type columns which are distributed alternatively is arranged between the anode region and the first conduction type base region, the dosage concentration of the first conduction type columns in the super-junction structure is the same as the dosage concentration of the second conduction type columns in the super-junction structure, and the dosage concentration of the first conduction type columns in the super-junction structure is higher than the dosage concentration of the first conduction type base region. The power diode is compact in structure, capable of effectively improving the dynamic snow slide resistance, safe and reliable and improves static breakdown voltage, and the performance of the power diode is improved.

Description

technical field [0001] The invention relates to a power diode, in particular to a power diode with improved dynamic avalanche resistance, and belongs to the technical field of power diodes. Background technique [0002] As a member of the power device family, power diodes have always played an important role in many fields, such as chopping, switching, and inverters. With the continuous development of power diodes to high-voltage devices, their reliability also requires more and more attention. When the FRD (fast recovery diode) is turned off, holes are extracted from the anode, and when the holes move to the space charge region of the anode, the charge polarity of the holes is the same as that of the ionized donor inside the space charge region, making this region The effective doping concentration N eff When the voltage increases, breakdown occurs when the voltage is lower than the static breakdown voltage (BV), which is called dynamic avalanche. Although increasing the...

AI Technical Summary

Problems solved by technology

Although increasing the substrate doping concentration can reduce the hole current to the effective doping concentration N eff , but it will also cause a decrease in the static breakdown voltage (BV), and may cause discontinuous current oscillation when the device is turned off, affecting the reliability of the device

As a key part of device reliability, dynamic avalanche has always been an important factor to be considered in medium and high voltage devices. When dynamic avalanche occurs, it can lead to device failure; for low voltage devices, although dynamic avalanche is not easy to burn the device, it prolongs the shutdown time. increase loss

Images