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Liquid phase stripping preparation method for phosphaalkene nanoribbon or phosphorus nanoribbon

A nano-ribbon, liquid phase exfoliation technology, applied in the preparation of phosphorus, etc., can solve the problems of low efficiency, unsatisfactory thickness of phosphorene, unstable quality, etc.

Pending Publication Date: 2016-06-15
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Aiming at the defects of mechanical stripping, low efficiency and unstable quality in the prior art, and the thickness of phosphorene produced by other preparation methods cannot meet the requirements, the present invention proposes a liquid phase solution of phosphorene nano-strips or phosphorus nano-strips Stripping preparation method, the prepared phosphorene nanobelt has low cost and high yield, which is conducive to further scientific research and popularization and application of phosphorene nanobelt

Method used

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  • Liquid phase stripping preparation method for phosphaalkene nanoribbon or phosphorus nanoribbon

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Embodiment 1

[0023] This embodiment includes the following steps: prepare strips, rectangular flake-shaped black phosphorus and DMSO solutions according to the concentration of 0.02g / mL to prepare a solution, and perform an ultrasonic reaction at a stripping reaction temperature of 30°C with a power of 50W for 6 hours; Centrifuge at 14,000 rpm for 30 minutes in a centrifuge, and take the supernatant; drop the solution on a silicon wafer and dry it at 90° C. to obtain phosphorene nanobelts.

[0024] Such as figure 1 Shown are the SEM photos of the prepared phosphorene nanoribbons and phosphorous nanoribbons.

Embodiment 2

[0026] This embodiment includes the following steps: prepare the mixed solution of strips, rectangular sheets of black phosphorus, DMSO, NMP and DMF according to the concentration of 0.2g / mL, and ultrasonically react for 24 hours at a stripping reaction temperature of 30°C; After ultrasonication, the solution was centrifuged in a centrifuge at 14,000 rpm for 30 minutes, and the supernatant was taken; the solution was dropped on a silicon wafer, spin-coated at 500 rpm for 60 seconds, and dried at 90°C to obtain phosphorene nanobelts.

Embodiment 3

[0028] The present embodiment comprises the following steps: the solution prepared by mixing strips, rectangular flake-shaped black phosphorus and DMSO, NMP and DMF mixed separating agent with alcohols and a concentration of 0.5g / mL is prepared, and the solution is prepared at the stripping reaction temperature Ultrasonic reaction at 30° C. for 48 hours; centrifuge the ultrasonic solution at 14,000 rpm for 30 minutes in a centrifuge to take the supernatant; drop the solution on a silicon wafer and dry it at 90° C. to obtain phosphorene nanobelts.

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Abstract

The invention relates to a liquid phase stripping preparation method for a phosphaalkene nanoribbon or phosphorus nanoribbon. The method consists of: mixing ribbon or flake black phosphorus with an organic solvent, conducting ultrasonic transverse tearing treatment and centrifugal treatment, then adding a supernatant rich in phosphaalkene nanoribbon in the product on a substrate, and then performing spin coating or drying. The phosphaalkene nanoribbon prepared by the method provided by the invention has better quality. The method is low in cost and has high yield, thus being beneficial to further scientific research and popularization and application of phosphaalkene nanoribbons.

Description

technical field [0001] The invention relates to a technology in the field of semiconductor material preparation, in particular to a liquid-phase exfoliation preparation method of phosphorene nano-ribbons or phosphorous nano-ribbons. Background technique [0002] As a new type of two-dimensional material, phosphorene has a wide tunable direct bandgap, high carrier mobility, and superior anisotropic photoelectric properties. The direct energy gap of black phosphorus can enhance its direct interaction with light. Coupling, making it a candidate material for future optoelectronic devices (such as photodetectors, solar cells, etc.), has shown great value in the fields of electronics and optoelectronics. [0003] The black phosphorus bulk is a semi-metal with a forbidden band width of 0.03eV. It exhibits metallic properties at room temperature, but when the number of black phosphorus layers is reduced to less than ten layers, the band gap of the black phosphorus structure will inc...

Claims

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Application Information

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IPC IPC(8): C01B25/02
CPCC01B25/02C01P2004/03C01P2004/17
Inventor 陈长鑫刘钦冉
Owner SHANGHAI JIAO TONG UNIV
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