Terahertz quantum level cascaded laser with integration of absorption waveguide and fabrication method of terhertz quantum level cascaded laser

Abstract

The invention provides a terahertz quantum level cascaded laser with integration of an absorption waveguide and a fabrication method of the terahertz quantum level cascaded laser. The terahertz quantum level cascaded laser comprises a semi-insulation GaAs substrate, a GaAs buffer layer, an n-type heavily-doping lower contact layer, an active region, an n-type heavily-doping upper contact layer, a first upper electrode metal layer, a second upper electrode metal layer and a lower electrode metal layer, wherein the GaAs buffer layer is arranged on the upper surface of the semi-insulation GaAs substrate, the n-type heavily-doping lower contact layer is arranged on the surface of the GaAs buffer layer, the active region is arranged on the surface of the n-type heavily-doping lower contact layer, the n-type heavily-doping upper contact layer is arranged on the surface of the active region, the first upper electrode metal layer and the second upper electrode metal layer are arranged on the surface of the n-type heavily-doping upper contact layer and are arranged at spacing distance of L, the second upper electrode metal layer is an upper electrode metal layer capable of high-waveguide loss after annealing, and the lower electrode metal layer is arranged on the surface of the n-type heavily-doping lower contact layer and on the two sides of the active region. With the terahertz quantum level cascaded laser with integration of the absorption waveguide and the fabrication method of the terahertz quantum level cascaded laser, provided by the invention, the problems that THz absorbers are discrete devices and the used materials are highly different from THz QCL so that the THz absorbers cannot be used in an on-chip integration system based on a THz OQL material in the prior art are solved.

Description

technical field [0001] The invention relates to the technical field of laser semiconductors, in particular to a terahertz quantum cascade laser integrated with an absorption waveguide and a manufacturing method thereof. Background technique [0002] Terahertz (THz) wave refers to a section of electromagnetic wave with a frequency between 100GHz and 10THz, which is between microwave and infrared wave. In terms of energy, the photon energy of THz waves covers the characteristic energy of semiconductors and plasmas, and also matches the rotation and vibration energies of organic and biological macromolecules, so it can be used in material detection, environmental monitoring and other fields; from the frequency domain From the looks of it, the frequency of THz waves is high, which is suitable for space security communication and high-speed signal processing and other fields; in addition, THz waves can penetrate a variety of non-conductive materials, such as plastics, wood, paper...

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Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a terahertz quantum cascade laser with integrated absorbing waveguide and its manufacturing method, which is used to solve the problem that the THz wave absorbing devices in the prior art are all discrete devices, and The use of materials is quite different from THzQCL, and it cannot be used in on-chip integrated systems based on THzQCL materials

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