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rsd trigger circuit based on pulse step-up transformer and magnetic switch

A step-up transformer and trigger circuit technology, applied in the direction of electric pulse generator circuit, energy storage element to generate pulses, etc., can solve the problems of reducing the practicability of the improved circuit, complicating the control system of the pre-charging circuit, increasing the cost of the pre-charging switch, etc. , to achieve the effect of increasing the parameter matching range, improving the utilization rate and improving the reliability

Inactive Publication Date: 2019-04-12
HUBEI UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, compared with the traditional pre-charging circuit, this circuit adds three semiconductor pre-charging switches, and the control system of the pre-charging circuit is more complicated, which significantly increases the cost of the pre-charging switch, and is only suitable for the triggering of the low-voltage RSD switch, reducing the The practicality of the improved circuit

Method used

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  • rsd trigger circuit based on pulse step-up transformer and magnetic switch
  • rsd trigger circuit based on pulse step-up transformer and magnetic switch
  • rsd trigger circuit based on pulse step-up transformer and magnetic switch

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Embodiment 1

[0017] Embodiment 1: as image 3 An RSD trigger circuit based on pulse step-up transformer and magnetic switch is shown: including low-voltage pulse power supply, pulse step-up transformer T, semiconductor switch K21, semiconductor switch K22, magnetic switch L21, magnetic switch L22, branch impedance Lc1, branch Circuit impedance Lc2, trigger loop impedance Lc.

[0018] The working process of its circuit is as follows:

[0019] The low-voltage pulse power supply outputs >2V0 voltage to the high-voltage side through the pulse transformer T to form a high di / dt narrow pulse pre-charging current of small-diameter semiconductor switches K21 and K22; the current path is T-K21-Lc-L-C0-Z0-K22 -Cc-T.

[0020] The path of the precharge current is CC-K22-RSD-Lc-K21-T-Cc. When T is saturated, the forward voltage of Cc is applied to K21 and K22, K21 and K22 are forward-conducting, and Cc is discharged through K21 and K22 to form a reverse precharge current of RSD. The current path is ...

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Abstract

The invention discloses an RSD trigger circuit based on a pulse boosting transformer and a magnetic switch. The RSD trigger circuit comprises a charging circuit, a discharging main circuit, an RSD trigger circuit, and a control circuit. The discharging main circuit is serially connected with the RSD trigger circuit, and the charging circuit is parallely connected with the main circuit and two ends of the RSD trigger circuit. The control circuit is parallely connected with two ends of the charging circuit and the RSD trigger circuit. The discharging main circuit comprises an RSD switch, a magnetic ring L, a main capacitor C0, and a load Z0. The RSD trigger circuit comprises a low voltage pulse power supply, a pulse transformer T, an RSD switch K21, an RSD switch K22, a magnetic switch LC, a magnetic switch L21, a magnetic switch L22, and a trigger capacitor Cc. The RSD trigger circuit is advantageous in that the advantages such as direct pre-charging and resonance pre-charging can be provided; the parameter matching range of the elements can be enlarged, and the reliability is high; the total size of the magnetic core can be reduced, and the utilization rate of the pre-charged charge can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor switches, in particular to an RSD trigger circuit based on a pulse step-up transformer and a magnetic switch. Background technique [0002] In the 1980s, the reverse switching transistor (RSD) invented by I.V.Grekhov, an academician of the former Soviet Union, can realize high di / dt and high current microsecond turn-on. The RSD device is a device composed of tens of thousands of thyristors and transistor cells arranged in parallel with each other. There is no control electrode of ordinary thyristors. It adopts a controllable plasma layer trigger mode and reversely injects trigger current to achieve synchronization on the entire chip area. Uniform conduction, from the principle of the device, eliminates the localized turn-on phenomenon of ordinary thyristor devices, thereby achieving high di / dt turn-on in microseconds, and passing a large current in a short time. Typical trigger (precharge) ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03K3/57
CPCH03K3/57
Inventor 彭亚斌
Owner HUBEI UNIV OF SCI & TECH