Resistive random access memory and its manufacturing method

Abstract

The invention provides a resistive random access memory with high reliability and a production method thereof. The memory comprises a memory cell and a control unit. The memory cell is positioned in a memory cell array, and is controlled by a word line, a bit line, a source line control and a switching logic circuit. The control unit comprises a word line decoder, a bit line decoder and a source line decoder. The word line decoder is used for setting electric potential on the word line. The bit line decoder is used for setting electric potential on the bit line. The source line decoder is used for setting electric potential on the source line. The switching logic circuit is operated by switching between a first state and a second state, and multitime read operation of the memory cell is carried out by alternate application of a read voltage to the bit line and the source line through alternate operation of the bit line decoder and the source line decoder. Alternate usage of a read current whose flow direction is opposite ensures uneasily damaged read / write electronic characteristics of the memory cell, so that the resistive random access memory has an effectively prolonged service life.

Description

technical field [0001] The present invention is related to resistive random access memory (Resistive Random Access Memory, RRAM), especially related to the read operation of resistive random access memory. Background technique [0002] The commonly used memory cell structure of resistive random access memory includes a transistor and a resistor. The resistance value of the resistor in the memory cell is changed by applying an external bias to perform writing and erasing operations, so that the element forms high and low resistance. State, that is, "0" and "1" in digital signals. The resistive random access memory unit not only has a simple structure, but also allows to be fabricated in a stacked manner, which is beneficial to increase the density of the memory unit. In addition, the resistive random access memory cell operates at a relatively low voltage, which is a very promising memory technology. [0003] However, the frequent use of the memory unit may damage the read / ...

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Problems solved by technology

The read / write electrical characteristics of the memory cell may also be compromised by reliability testing

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