Structure and method for reducing in-band noise in multistage power amplifier for mobile communication

A power amplifier and mobile communication technology, which is applied in the direction of improving the amplifier to reduce the impact of noise, etc., to achieve the effects of fast heat dissipation, thermal noise reduction, and reduction of in-band noise

Inactive Publication Date: 2016-07-27
佛山臻智微芯科技有限公司
View PDF5 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the practice and products to reduce in-band noise from the packaging method have not yet appeared

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Structure and method for reducing in-band noise in multistage power amplifier for mobile communication
  • Structure and method for reducing in-band noise in multistage power amplifier for mobile communication
  • Structure and method for reducing in-band noise in multistage power amplifier for mobile communication

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0019] A preferred embodiment of the present invention, such as Figure 1 to Figure 4 Shown, a structure that reduces the in-band noise in the mobile communication multistage power amplifier. figure 1 Shown is a flip-chip front-end module chip (FlipChipFrontEndModule) with the top layer of plastic packaging material removed as a test object for this test. The front-end module chip (chip) includes three chips (die): a power amplifier chip (die) using gallium arsenide material and heterojunction bipolar transistor (HBT) process, and a power amplifier chip (die) using silicon material and complementary metal oxide semiconductor (CMOS) process controller die (die) and a switcher die (die) using gallium arsenide material, high electron mobility transistor (pHEMT) process. The front-end module chip is soldered on a test board, and the power supply voltage of 3.4V and 4.2V is used to test the chip under the condition of power saturation and 100% duty cycle. Connect a temperature se...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a structure for reducing in-band noise in a mobile communication multistage power amplifier, comprising a power amplifier chip, a plastic packaging material, a substrate and a radio frequency shielding cover, the power amplifier chip is welded on the substrate; the radio frequency shielding cover, the power amplifier A plastic sealing material is filled between the chip and the substrate, the top surface of the amplifier chip is pasted with a heat-conducting material, and the radio frequency shield is covered and pasted on the heat-conducting material and the plastic sealing material. The packaging method is that the power amplifier chip is welded to the substrate, and the top surface of the power amplifier chip is pasted with a heat-conducting material; the plastic sealing material is used for filling, and the top surface of the plastic sealing material is in contact with the top surface of the heat-conducting material on the power amplifier chip. flush. The invention utilizes the radio frequency shielding cover as the heat sink of the power amplifier chip through the encapsulation method to make the chip dissipate heat faster, thereby reducing the thermal noise of the device and reducing the in-band noise.

Description

technical field [0001] The invention relates to a power amplifier and a design method thereof. Background technique [0002] With the development of mobile terminals, people are more and more accustomed to using mobile terminals to surf the Internet, shop, and socialize. Mobile terminals are increasingly inseparable from people's lives. The power amplifier in the mobile terminal is the main receiving device to ensure the seamless connection between the terminal and the base station, and whether we want to surf the Internet, make a phone call, or send a message, it is all through the base station, so mobile terminal suppliers hope that the power amplifier module can There are quite good performance indicators, such as power-added efficiency, gain or linearity (for linear PAs), etc. Of course, they also hope that the power amplifier has a good performance in reducing in-band noise, because the size of in-band noise has a great impact on duplex communication systems such as mo...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H03F1/26
CPCH03F1/26
Inventor 黄敬馨章国豪区力翔唐杰林俊明李思臻
Owner 佛山臻智微芯科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products