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Voltage distribution method and apparatus for flash memory unit model

A flash memory cell and voltage distribution technology, applied in the field of memory, can solve the problems of low accuracy of flash memory cell model simulation results, etc.

Active Publication Date: 2016-08-10
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, using the above voltage division method, the simulation results of the obtained flash memory cell model have low accuracy

Method used

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  • Voltage distribution method and apparatus for flash memory unit model
  • Voltage distribution method and apparatus for flash memory unit model
  • Voltage distribution method and apparatus for flash memory unit model

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Embodiment Construction

[0085] Below to figure 1 and figure 2 Take the flash memory cell shown as an example, and explain in detail how to distribute the voltage of the flash memory cell model during the use of the existing flash memory cell model:

[0086] figure 1 It is a schematic cross-sectional structure diagram of an existing flash memory unit M0. The flash memory unit M0 has a double split-gate transistor structure and includes two symmetrically distributed storage structures, and each storage structure stores one bit of data. Specifically, the flash memory unit M0 includes: a substrate 100 ; an intermediate electrode 103 located above the substrate 100 ; and a first storage structure and a second storage structure symmetrically distributed on both sides of the intermediate electrode 103 .

[0087] Wherein, the first storage structure includes a first bit line electrode 101, a first control gate 104, and a first floating gate 105; the second storage structure includes a second bit line elec...

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Abstract

The invention discloses a voltage distribution method and apparatus for a flash memory unit model. A flash memory unit comprises an intermediate electrode and at least one storage structure; the storage structure comprises a bit line electrode, a control gate and a floating gate; the flash memory unit model comprises a first port corresponding to the intermediate electrode, a second port corresponding to the control gate, a third port corresponding to the floating gate and a fourth port corresponding to the bit line electrode; and a current is tested through the fourth port. The method comprises the steps of performing calculation based on a ratio pcg to obtain a first voltage value V31 according to a voltage value V2 of a voltage input to the second port, wherein pcg is greater than 0 and less than or equal to 1; and performing calculation to obtain a voltage value V3 of a voltage actually distributed to the third port according to a voltage value V1 of a voltage input to the first port and the first voltage value V31, and distributing the voltage to the third port according to the voltage value V3. With the adoption of the scheme, the simulation result precision of the flash memory unit model can be improved.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a voltage distribution method and device for a flash memory unit model. Background technique [0002] As an integrated circuit storage device, flash memory (flash memory) is widely used in portable computers, mobile phones, digital music players, etc. devices and other electronic products. [0003] The flash memory is provided with a storage array for storing data, and peripheral circuits for performing read and write operations. Wherein, the storage array is provided with several flash memory units arranged in an array. Each flash memory cell may include a substrate, an intermediate electrode over the substrate, and at least one memory structure. Each storage structure can store at least one bit of data. Generally, each memory structure may include: a bit line electrode, a control gate and a floating gate. The control gate, the middle electrode and the bit line electrode of ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F17/50G11C16/30
CPCG06F30/30G11C16/30
Inventor 廖梦星高超
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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