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Etching method for controlling flattening of bottom of silicon oxide trench

A silicon oxide and planarization technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem that the bottom of the trench cannot meet the planarization process requirements of the bottom of the trench, and achieve cost-saving effects

Active Publication Date: 2016-08-10
SEMICON MFG INT (SHANGHAI) CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide an etching method for controlling the planarization of the bottom of the silicon oxide trench, which is used to solve the problem of lack of Corresponding to the barrier layer and using conventional technology to make the bottom of the groove appear arc-shaped, which cannot meet the requirements of the flattening process of the bottom of the groove

Method used

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  • Etching method for controlling flattening of bottom of silicon oxide trench
  • Etching method for controlling flattening of bottom of silicon oxide trench
  • Etching method for controlling flattening of bottom of silicon oxide trench

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Embodiment 1

[0033] Such as figure 1 As shown, it represents the flow process of the etching method of the present invention to control the planarization of the bottom of the silicon oxide trench. The steps of the method of the present invention are as follows: Step 1: Provide a device located in the reaction chamber and such as figure 2 The shown silicon oxide structure 10 covered with photoresist patterns, the reaction chamber is used to etch the silicon oxide structure, the etching method of the silicon oxide structure is dry etching, and plasma dry etching. Preferably, the etching equipment used for plasma dry etching in the present invention is Applied material eMax CENTURAII equipment. The equipment has a reaction chamber for dry etching; the silicon oxide structure is generally a prepared silicon dioxide material structure, and the surface of the silicon oxide structure is covered with a photoresist pattern (photomask pattern) During etching, etching is carried out according to t...

Embodiment 2

[0039] The difference between this embodiment and the first embodiment is that the first fluorocarbon gas introduced in the second step is C 4 f 8 ; The second fluorocarbon compound gas introduced in step 3 is C 2 f 6 .

[0040] Such as figure 1 As shown, it represents the process flow of the etching method for controlling the planarization of the bottom of the silicon oxide trench in this embodiment. The method steps of the present invention are as follows: Step 1: Provide a photoresist pattern located in the reaction chamber The silicon oxide structure 10, the reaction chamber is used to etch the silicon oxide structure, and the method for etching the silicon oxide structure is dry etching, and plasma dry etching. Preferably, the etching equipment used for plasma dry etching in the present invention is Appliedmaterial eMax CENTURAII equipment. The equipment has a reaction chamber for dry etching; the silicon oxide structure is generally a prepared silicon dioxide materi...

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Abstract

The invention provides an etching method for controlling the flattening of the bottom of a silicon oxide trench, and the method at least comprises the steps: providing a silicon oxide structure which is located in a reaction cavity and is covered by a photoresistive pattern; filling the reaction cavity with first fluorocarbon gas, and etching the silicon oxide structure to form a first trench; stopping the supply of the first fluorocarbon gas, filling the reaction cavity with second fluorocarbon gas, and etching the silicon oxide structure to form a second trench communicated with the first trench; controlling the ratio of the depth of the second trench to the depth of the first trench, so as to achieve the flattening of the bottom of the second trench. The method controls the ratio of the etching depths of the silicon oxide trenches through C2F4 and C4F8, and enables the bottom of the silicon oxide trench to be flat. Meanwhile, silicon nitride is replaced by a blocking layer, thereby saving the production cost.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to an etching method for controlling the planarization of the bottom of a silicon oxide groove. Background technique [0002] Dry etching is one of the most important technologies in the semiconductor process. Its purpose is to completely copy the mask pattern to the surface of the silicon wafer. eclipse. Not a single integrated circuit chip can be completed today without plasma etching technology. Etching is the process of selectively removing unwanted material from the surface of a silicon wafer by chemical or physical means. The basic purpose of etching is to correctly replicate the mask pattern on the silicon wafer with spin-coated photoresist. The patterned photoresist layer is not significantly attacked by the etch source during etching. This layer of mask is used to protect specific areas on the silicon wafer during etching and selectively etch away areas not protec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/311
Inventor 王智东傅俊
Owner SEMICON MFG INT (SHANGHAI) CORP