Substrate manufacturing method for enhancing backlight brightness

A technology of backlight brightness and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of long growth period in the growth process, contamination of the growth surface, etc., and achieve improved unidirectionality, increased reflective area, and improved luminescence efficiency effect

Inactive Publication Date: 2016-08-10
XIAMEN CHANGELIGHT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since ELOG technology requires SiO 2 Or SiNx as a mask, the growth process needs to be interrupted and the growth cycle is longer, and the growth mask will also cause contamination of the growth surface, etc.

Method used

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  • Substrate manufacturing method for enhancing backlight brightness
  • Substrate manufacturing method for enhancing backlight brightness
  • Substrate manufacturing method for enhancing backlight brightness

Examples

Experimental program
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Embodiment Construction

[0038] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0039] refer to figure 1 and figure 2 As shown, a substrate for improving the brightness of a backlight disclosed by the present invention is provided with a plurality of raised three-dimensional patterns 2 on the surface of the substrate 1, and on the surface of the substrate 1 between the plurality of raised three-dimensional patterns 2 The recessed three-dimensional patterns 3, so that a plurality of recessed three-dimensional patterns 3 are arranged on the surface of the substrate 1. The substrate 1 is preferably a sapphire substrate, and may be other substrates.

[0040] A plurality of recessed three-dimensional patterns 3 are arranged on the surface of the substrate 1, which increases the reflective area of ​​the substrate 1 and effectively improves the luminous efficiency of the light-emitting diode; the use of the recessed three-di...

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PUM

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Abstract

The invention discloses a method for manufacturing a substrate for improving the brightness of a backlight source. A method for manufacturing a substrate for improving the brightness of a backlight source includes the following steps: 1. Provide a substrate, and form a convex surface on the substrate by masking and photolithography. Second, use ICP etching to transfer the three-dimensional photoresist pattern to the surface of the substrate to form a raised three-dimensional pattern; third, form depressions on the substrate by masking and photolithography The three-dimensional photoresist pattern; four, using ICP etching, the three-dimensional photoresist pattern is transferred to the substrate surface, forming a concave three-dimensional pattern, and forming a lining of a concave three-dimensional pattern between adjacent raised three-dimensional patterns end. The invention can obtain better unidirectional light source and effectively improve luminous efficiency.

Description

technical field [0001] The invention relates to the technical field of LEDs, in particular to a substrate manufacturing method for improving the brightness of a backlight source. Background technique [0002] Light-emitting diodes have the advantages of low power consumption, small size and high reliability, and are favored as a new generation of light sources. With the continuous progress of gallium nitride-based blue-green light-emitting diode technology, LED has achieved unprecedented development in various application fields. [0003] As the base of light-emitting diodes, the substrate is also an important way to improve the external quantum efficiency of LEDs. In the prior art, by manufacturing a raised PSS pattern on the surface of the substrate, the crystal quality of the epitaxial layer of the light-emitting diode is improved, and the light-reflecting area of ​​the light-emitting diode is increased. PSS technology is a derivative technology of epitaxy lateral (ELOG...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00
CPCH01L33/007
Inventor 林志伟陈凯轩张永卓祥景姜伟方天足
Owner XIAMEN CHANGELIGHT CO LTD
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