Apparatus for manufacturing polysilicon

A technology of polysilicon and shielding, applied in the direction of hydrogenated silicon, silicon compounds, chemical/physical/physicochemical fixed reactors, etc., can solve the problems of poor insulation properties, heat loss, etc., to reduce maintenance costs and omit cleaning operations Effect

Active Publication Date: 2016-08-10
HANWHA CHEMICAL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Therefore, silicon is deposited on the upper surface of the electrode and the spacer ring, and as a result, the insulation characteristic between the electrode and the substrate deteriorates
In addition, heat loss due to electrodes occurs in the lower part of the filament

Method used

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  • Apparatus for manufacturing polysilicon
  • Apparatus for manufacturing polysilicon
  • Apparatus for manufacturing polysilicon

Examples

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Embodiment Construction

[0034] The present invention will be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

[0035] figure 1 is a sectional view of an apparatus for manufacturing polysilicon according to a first exemplary embodiment of the present invention, figure 2 yes figure 1 An enlarged partial view of the apparatus used to manufacture polysilicon is shown.

[0036] refer to figure 1 with figure 2 , the apparatus 100 for manufacturing polysilicon 100 is constructed of a chemical vapor deposition (CVD) reactor provided with heatable silicon filaments. Specifically, the apparatus 100 for manufacturing polysilicon includes a reaction chamber 10 , at least one pair of electrodes 20 , at least one pair of filaments 30 and ...

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Abstract

An apparatus for manufacturing polysilicon using a chemical vapor deposition (CVD) reactor is provided. The apparatus for manufacturing polysilicon includes: a reaction chamber including a substrate and a reactor cover; at least a pair of electrodes installed through the substrate by an insulating member and connected with a power supply; at least a pair of filaments which are coupled with the pair of electrodes by an electrode chuck and of which upper ends are connected to each other; and a cover assembly including an electrode cover surrounding an upper surface and a side of each of the pair of electrodes on the substrate and a cover shield covering the upper surface of the electrode cover.

Description

technical field [0001] The present invention relates to an apparatus for manufacturing polysilicon, and in particular, the present invention relates to an apparatus for manufacturing polysilicon including an electrode cover. Background technique [0002] Polycrystalline silicon or polycrystalline silicon is a component used as a basic material in the semiconductor industry, the solar power generation industry, and the like. Among the methods for producing polysilicon, a Siemens precipitation method using a chemical vapor deposition (CVD) reactor is known. [0003] Apparatus for manufacturing polysilicon according to the Siemens precipitation method comprising a reactor cover attached to a substrate, at least a pair of electrodes mounted through the substrate, a filament coupled to the electrode via an electrode clamp, and an upper end connected to the pair of filaments the connecting rod. The pair of electrodes is connected to a power source and insulated from the base by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J19/24C01B33/04
CPCB01J19/087B01J2219/0809B01J2219/0815B01J2219/0828B01J2219/0837C01B33/035B01J19/24C01B33/04
Inventor 朴奎学朴成殷朴济城李熙东
Owner HANWHA CHEMICAL CORPORATION
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