Method for preparing silicon-based nano-pattern array structure

Abstract

The invention provides a method for preparing a silicon-based nano-pattern array structure, the method comprising: setting a silicon substrate; depositing a barrier layer on the silicon substrate, and depositing an aluminum film on the barrier layer; The film is anodized once to form a first nano-pattern array structure on the surface of the aluminum film away from the silicon substrate; the second acid solution is used to remove the first nano-pattern array structure; the third acid solution is used to treat the aluminum film Perform secondary anodizing to form the aluminum film into an aluminum oxide nano-pattern array structure; use the aluminum oxide nano-pattern array structure as a mask to etch the barrier layer and the silicon substrate to form the silicon substrate and the barrier layer into a It has a nano-pattern array structure corresponding to the aluminum oxide nano-pattern array structure; the aluminum oxide nano-pattern array structure on the silicon substrate and the barrier layer formed as the nano-pattern array structure are removed by using a buffered oxide etchant, thereby obtaining a silicon substrate Nano pattern array structure.

Description

technical field [0001] The invention relates to a method for preparing a patterned substrate, in particular, the invention relates to a method for preparing a silicon-based nanometer pattern array structure. Background technique [0002] As silicon-based semiconductor devices shrink in size, traditional bulk silicon materials are approaching their physical limits. Germanium and Ⅲ-Ⅴ main group materials have attracted widespread attention due to their superior performance compared with silicon materials in applications. However, germanium and III-V main group materials are expensive, and they are not compatible with silicon-based processes. In addition, when silicon-based epitaxy, germanium and III-V main group materials cannot form a good lattice match with silicon, resulting in high dislocation defects. In order to solve the above problems, a series of patterned substrate technologies have been proposed and developed, especially GaAs epitaxy requires the size of the patte...

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Problems solved by technology

However, since photolithography or nanoimprinting methods are required to prepare patterned substrates of this size, this increases the production cost and requires strict processes.

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