A Schottky junction tunneling field effect transistor
A tunneling field effect and Schottky junction technology, applied in semiconductor devices, electrical components, circuits, etc., to achieve good switching characteristics, increase width, and suppress short channel effects.
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[0015] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be described in detail below in conjunction with the accompanying drawings.
[0016] Such as figure 1 A Schottky junction tunneling field effect transistor is shown, comprising a first gate 1, a source region 2, a drain region 3, a channel region 4, a heavily doped pocket region 5, a first gate dielectric layer 6, a second A gate 8 and a second gate dielectric layer 7; wherein the upper and lower sides of the channel region 4 are respectively provided with a first gate dielectric layer 6 and a second gate dielectric layer 7; above the first gate dielectric layer 6 is provided with a first gate 1. A second gate 8 is provided under the second gate dielectric layer 7; the first gate 1, the first gate dielectric layer 6, the second gate 8 and the second gate dielectric layer 7 maintain vertical symmetry; the source region 2 and The drain region 3 is ...
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