A short-circuit monitoring circuit for mos tubes in a drive circuit

A technology of MOS tube and driving circuit, applied in the field of short circuit monitoring circuit, can solve the problems of MOS tube pass-through, MOS tube protection effect is not large, increase R&D cost, etc., and achieve the effect of small area, simple and reliable circuit construction, and fewer components.

Inactive Publication Date: 2018-11-09
SENYUAN DONGBIAO ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the existing MOS driving circuit is rarely added with a short-circuit detection function for the MOS tube. Even if the protection circuit of the MOS tube is added, the protection effect on the MOS tube is not great due to the lack of details of the speed and the protection point, thus Leading to straight-through and damage of the MOS tube, which greatly increases the cost of research and development

Method used

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  • A short-circuit monitoring circuit for mos tubes in a drive circuit

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Embodiment Construction

[0011] Such as figure 1 As shown, this short-circuit monitoring circuit for MOS transistors in the drive circuit includes: a drive signal input terminal (4), an absorption filter circuit, first, second, and third diodes (D14, D21, D27), Transistor (Q4), optocoupler (U11), fault signal detection terminal (1), micro control unit MCU;

[0012] The absorbing filter circuit includes a first resistor (R35), a fourth diode (D20), and a first capacitor (C83), and the anode of the first capacitor (C83) is connected to the anode and cathode of the first diode (D14). Connect the S end of the MOS tube, the anode of the fourth diode (D20) is connected to the anode of the first diode (D14) and the cathode is connected to the drive signal input terminal (4);

[0013] The first, second, third, and fourth diodes (D14, D21, D27, D20) are all ultra-fast recovery diodes, and the optocoupler is a fast optocoupler;

[0014] When the MOS tube works normally, the current flows through the drive sig...

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Abstract

The invention discloses a short-circuit monitoring circuit for an MOS tube in a drive circuit. When the MOS tube works normally, a current successively flows through a drive signal input end (4), a first resistor (R35), a first diode (D14), a D end of the MOS tube, an S end of the MOS tube as well as a positive electrode and a negative electrode of a fourth diode (D20); work of an audion (Q4) is stopped; an opto-coupler does not act; a fault signal detection end (1) has a high level; an MCU connected to the fault signal detection end (1) does not act; and continuous pulses are sent to the MOS. When the MOS tube works abnormally, the current successively flows through the drive signal input end (4), the first resistor (R35), a positive electrode and a negative electrode of a second diode (D21), a positive electrode and a negative electrode of a third diode (D27), and the positive electrode and the negative electrode of the fourth diode (D20); the audion (Q4) starts a conductive state; the opto-coupler starts a conductive state; the fault signal detection end (1) has a low level; and the MCU connected to the fault signal detection end (1) stops sending the pulses to the MOS.

Description

technical field [0001] The invention relates to the technical field of electronic circuits, in particular to a short-circuit monitoring circuit for MOS transistors in a drive circuit. Background technique [0002] MOS tube is a metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor FieldEffect Transistor). Due to its small size, light weight, long life, convenient control mode, strong anti-interference performance, and low power consumption, it is more and more widely used in drive in the circuit. However, the existing MOS driving circuit is rarely added with a short-circuit detection function for the MOS tube. Even if the protection circuit of the MOS tube is added, the protection effect on the MOS tube is not great due to the lack of details of the speed and the protection point, thus This leads to straight-through and damage of the MOS tube, which greatly increases the cost of research and development. Contents of the invention [0003] The techn...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G05B19/042
CPCG05B19/0423G05B2219/21162
Inventor 周继华赵志芳李鹏飞
Owner SENYUAN DONGBIAO ELECTRIC CO LTD
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