Terahertz double frequency unbalanced circuit with high power capacity

Abstract

This invention discloses a terahertz double frequency unbalanced circuit with high power capacity, which relates to the terahertz circuit technology field. The circuit comprises a radio frequency input waveguide, a quartz substrate and a radio frequency output waveguide. One end of the quartz substrate is located in the waveguide slot of the radio frequency input waveguide; the other end of the quartz substrate is located in the waveguide slot of the radio frequency output waveguide. An input transition microstrip line is located on the quartz substrate. One end of the transition microstrip line is connected with an output microstrip line successively through a first transmission microstrip line, a low pass filter, a radio frequency matching mirostrip line and a second transmission microstrip line. The anodes of four multi-junction GaAs terahertz double frequency diodes are connected with the radio frequency matching microstrip line; each outermost cathode of the mulit-junction GaAs terahertz double frequency diode is connected to a grounded quartz stripline. The circuit has a simple structure and can withstand a larger input power due to an increase in the number of Schottky diodes.

Description

technical field [0001] The invention relates to the technical field of terahertz circuits, in particular to a power-resistant terahertz double frequency unbalanced circuit. Background technique [0002] In a broad sense, terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1-10THz, where 1THz=1000GHz, and some people think that THz frequencies refer to electromagnetic waves in the range of 0.3THz-3THz. THz waves occupy a very special position in the electromagnetic spectrum, and THz technology is recognized as a very important cross-frontier field by the international scientific and technological community. [0003] In terahertz communication, measurement and other systems, the source is crucial. At present, the miniaturized and low-cost solid-state terahertz frequency doubling technology is a hot topic in international research. GaAs-based planar Schottky diodes are mainly used as nonlinear frequency doubling devices to achieve power outp...

AI Technical Summary

Problems solved by technology

[0005] In the unbalanced double frequency doubler circuit that is often used at present, Schottky diodes are generally made into diodes suitable for the double frequency doubler circuit during the production process. Generally, there are only 4 junctions or 6 junctions. The effective withstand power of a Schottky diode junction is about 20mW, so the further increase of input power is limited, and the output power cannot continue to increase.

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