Terahertz double frequency unbalanced circuit with high power capacity

A technology of terahertz and frequency doubling, applied in the field of terahertz circuits, can solve the problem that the output power cannot continue to increase, and achieve the effect of simple structure, large input power, and good grounding

A technology of terahertz and frequency doubling, applied in the field of terahertz circuits, can solve the problem that the output power cannot continue to increase, and achieve the effect of simple structure, large input power, and good grounding

CN106026927AActive Publication Date: 2016-10-12THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP

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  • Terahertz double frequency unbalanced circuit with high power capacity

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Embodiment Construction

[0018] The technical solutions in the embodiments of the present invention are clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0019] In the following description, a lot of specific details are set forth in order to fully understand the present invention, but the present invention can also be implemented in other ways different from those described here, and those skilled in the art can do it without departing from the meaning of the present invention. By analogy, the present invention is therefore not limited to the specific examples disclosed below.

[0020] like figure 1 A...

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Abstract

This invention discloses a terahertz double frequency unbalanced circuit with high power capacity, which relates to the terahertz circuit technology field. The circuit comprises a radio frequency input waveguide, a quartz substrate and a radio frequency output waveguide. One end of the quartz substrate is located in the waveguide slot of the radio frequency input waveguide; the other end of the quartz substrate is located in the waveguide slot of the radio frequency output waveguide. An input transition microstrip line is located on the quartz substrate. One end of the transition microstrip line is connected with an output microstrip line successively through a first transmission microstrip line, a low pass filter, a radio frequency matching mirostrip line and a second transmission microstrip line. The anodes of four multi-junction GaAs terahertz double frequency diodes are connected with the radio frequency matching microstrip line; each outermost cathode of the mulit-junction GaAs terahertz double frequency diode is connected to a grounded quartz stripline. The circuit has a simple structure and can withstand a larger input power due to an increase in the number of Schottky diodes.

Description

technical field [0001] The invention relates to the technical field of terahertz circuits, in particular to a power-resistant terahertz double frequency unbalanced circuit. Background technique [0002] In a broad sense, terahertz (THz) waves refer to electromagnetic waves with frequencies in the range of 0.1-10THz, where 1THz=1000GHz, and some people think that THz frequencies refer to electromagnetic waves in the range of 0.3THz-3THz. THz waves occupy a very special position in the electromagnetic spectrum, and THz technology is recognized as a very important cross-frontier field by the international scientific and technological community. [0003] In terahertz communication, measurement and other systems, the source is crucial. At present, the miniaturized and low-cost solid-state terahertz frequency doubling technology is a hot topic in international research. GaAs-based planar Schottky diodes are mainly used as nonlinear frequency doubling devices to achieve power outp...

Claims

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Application Information

Patent Timeline
12 Oct 2016
Publication
CN106026927A
IPC
H03B19/14
CPC
H03B19/14; H03B19/05; H03B2200/0084; H01P5/107
Inventors
王俊龙; 冯志红