Low-temperature polysilicon thin film transistor array substrate and manufacturing method thereof, liquid crystal panel
A technology of thin-film transistors and low-temperature polysilicon, which is applied in instruments, nonlinear optics, optics, etc., can solve problems such as difficult to remove, easy to oxidize, and poor product display characteristics, and achieve the effect of improving product quality and improving contact conditions
Active Publication Date: 2019-09-10
WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
[0004] However, in the manufacturing process of the existing LTPS array substrate, the common voltage signal is transmitted to the common electrode through the via holes in the flat layer (PLN) around the display area (ie, AA area) of the LTPS array substrate, while the surrounding The signal line under the flat layer is formed by a composite metal structure (such as Ti / Al / Ti structure), but Ti (titanium) metal is prone to oxidation in the process environment and post-process (such as baking) environment, thus forming TiO x , while TiO x The resistance value is high and it is not easy to remove, which may easily cause abnormal input of the common voltage signal, resulting in poor display characteristics of the product
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[0022] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the specific embodiments set forth herein. Rather, the embodiments are provided to explain the principles of the invention and its practical application, thereby enabling others skilled in the art to understand the invention for various embodiments and with various modifications as are suited to particular intended uses. In the drawings, the same reference numerals will be used to denote the same elements throughout.
[0023] figure 1 is a top view of a low temperature polysilicon thin film transistor array substrate according to an embodiment of the present invention. figure 2 is a structural schematic diagram of a low temperature polysilicon thin film transistor and a pixel electrode according to an embodiment of the present invention. i...
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The invention discloses a low-temperature polysilicon film transistor array substrate, comprising a substrate, a display portion on the substrate and a non-display portion extended along an edge of the display portion, and the non-display portion includes: a composite metal layer on the substrate; a flat layer on the composite metal layer; a first through hole exposing partially the composite metal layer in the flat layer; a common electrode layer on the flat layer; a passivation layer covering the common electrode layer and exposing the composite metal layer; a second through hole and a third through hole in the passivation layer, wherein the second through hole exposes partially the composite metal layer and the third through hole exposes partially the common electrode layer; an electric connection layer on the passivation layer, wherein the electric connection layer fills respectively the second through hole and the third through hole to contact the composite metal layer and the common electrode layer respectively. Since metal oxides formed on the composite metal layer contacted with the passivation layer can be removed during manufacture of the passivation layer, contact condition of the composite metal layer with the common electrode layer is improved and product quality is thus improved.
Description
technical field [0001] The invention belongs to the technical field of liquid crystal display, and in particular relates to a low-temperature polysilicon thin film transistor array substrate, a manufacturing method thereof, and a liquid crystal panel. Background technique [0002] With the evolution of optoelectronics and semiconductor technology, it has also led to the vigorous development of flat panel displays. Among many flat panel displays, liquid crystal displays (LCD for short) have high space utilization efficiency and low power consumption. , no radiation and low electromagnetic interference and many other superior features have become the mainstream of the market. [0003] At present, amorphous silicon thin-film transistors (a-Si TFT) are widely used as switching elements of LCDs, but a-SiTFT LCDs meet the requirements of thin, light weight, high precision, high brightness, high reliability, low power consumption, etc. Requests are still limited. Compared with a-...
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IPC IPC(8): G02F1/1345G02F1/1343
Inventor 张占东
Owner WUHAN CHINA STAR OPTOELECTRONICS TECH CO LTD