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Quantum dot LED and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problems of poor repeatability of QLED device performance, non-adjustable light color, poor display effect of display devices, etc., to achieve optimization Color rendering, guaranteed encapsulation effect, enhanced stability effect

Active Publication Date: 2016-10-26
TCL CORPORATION
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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of poor performance repeatability and non-adjustable light color of existing QLED devices, which leads to poor display effect of the display device. bad question

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Embodiment Construction

[0024] The present invention provides a quantum dot light-emitting diode and a preparation method. In order to make the purpose, technical solution and effect of the present invention clearer and clearer, the present invention will be further described in detail below. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0025] see figure 1 , figure 1 It is a flowchart of a preferred embodiment of a method for preparing a quantum dot light-emitting diode of the present invention, as shown in the figure, which includes steps:

[0026] S100, first depositing a hole transport layer on the anode;

[0027] S200, then depositing a quantum dot light emitting layer on the hole transport layer;

[0028] S300, then sequentially depositing an electron transport layer and an electron injection layer on the quantum dot light-emitting layer, and then evaporating a cathode on the electron...

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Abstract

The invention discloses a quantum dot LED and a preparation method thereof. The method comprises the steps that a cavity transmission layer is deposited on an anode; a quantum dot luminescent layer is deposited on the cavity transmission layer; an electron transmission layer and an electron injection layer are deposited on the quantum dot luminescent layer successively; a cathode is vapor-plated on the electron injection layer to prepare a QLED device; and a mixture of a thermal expansion material and a packaging glue is added to the periphery of the prepared QLED device drop by drop, a cover sheet is packaged, infrared baking is carried out, and packaging is completed. According to the invention, the packaging glue is mixed with the thermal expansion material, so that the packaging effect can be ensured, heat is conducted out timely, and the stability of the QLED device is enhanced. More importantly, the added thermal expansion material is very sensitive to heat, the thickness of the material can be adjusted according to temperature change, time that light emitted by the QLED device penetrates a thermal expansion material layer can be adjusted, and the wavelength of light penetrating the thermal expansion material layer is adjusted to optimize the color rendering performance.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to a quantum dot light emitting diode and a preparation method. Background technique [0002] Semiconductor quantum dots have size-tunable optoelectronic properties and have been widely used in light-emitting diodes, solar cells, and bioluminescent labels. After more than 20 years of development of quantum dot synthesis technology, people have been able to synthesize various high-quality nanomaterials, and their photoluminescence efficiency can reach more than 85%. Quantum dot light-emitting diodes (QD-LEDs) with quantum dots as the light-emitting layer are a promising next-generation display and solid-state lighting sources. Quantum dot light-emitting diodes (QLEDs) have received extensive attention and research in the fields of lighting and display in recent years due to their many advantages such as high brightness, low power consumption, wide color gamut, and eas...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52H01L51/56
CPCH10K50/115H10K50/844H10K71/00
Inventor 刘佳曹蔚然杨一行钱磊
Owner TCL CORPORATION
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