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A kind of super-barrier rectifier and its preparation method

An ultra-barrier rectifier and control grid technology, applied in the field of ultra-barrier rectifier and its preparation, can solve the problems of limited application and rising on-resistance, and achieve the effect of reducing process cost and on-resistance

Active Publication Date: 2019-05-21
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When the device is used in high-voltage applications, the on-resistance rises sharply, which limits the application of high-voltage devices in high-voltage power semiconductor rectifiers

Method used

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  • A kind of super-barrier rectifier and its preparation method
  • A kind of super-barrier rectifier and its preparation method
  • A kind of super-barrier rectifier and its preparation method

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Embodiment Construction

[0040] It should be noted that, in the case of no conflict, the following technical solutions and technical features can be combined with each other.

[0041] The specific embodiment of the present invention will be further described below in conjunction with accompanying drawing:

[0042] see Figure 1a The super-barrier rectifier SBR includes a base substrate 101 and an epitaxial layer 102 carried on the base substrate 101, and a plurality of semiconductor drift regions 201 of the first conductivity type are formed by using an epitaxial process. In this embodiment, the first conductivity type may be P type.

[0043] Further, the multiple semiconductor drift regions 201 can be formed by multiple ion implantations with different energies after the epitaxial layer 102 is formed, and can also be formed by growing the epitaxial layer 102 and multiple ion implantations during the process of growing the epitaxial layer 102, The implanted ions may be P−, and the implanted concentr...

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Abstract

The invention relates to the rectifier of a power semiconductor, especially to a super-barrier rectifier and a preparation method thereof. When a super-barrier rectifier (SBR) is in an ON state, a semiconductor drift region 201 with high concentration provides lots of majority carriers for the SBR, thereby forming a plurality of low-resistance current channels. Therefore, the on resistance of the SBR is reduced substantially and thus the process cost is lowered substantially.

Description

technical field [0001] The invention relates to a power semiconductor rectifier, in particular to a super-barrier rectifier and a preparation method thereof. Background technique [0002] Common power semiconductor rectifiers include Schottky Barrier Diodes, which have the characteristics of low turn-on voltage, fast turn-off rate, and cut-off when reverse biased. The main principle is to form a metal-silicon barrier. In most cases, the barrier metal is different from the conventional metal ohmic contact, so that the height of the barrier needs to be adjusted. It is necessary to adjust the composition of the barrier metal and provide a more complicated process to meet this requirement. For one thing, it does not meet cost requirements and does not provide better product performance. In particular, Schottky barrier rectifier diodes have high reverse power consumption due to excessive leakage current, and the leakage current is proportional to the approximate ambient temperat...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/06H01L29/78H01L21/336
CPCH01L21/77H01L27/06H01L29/78
Inventor 陈茜胡玮黄晓橹
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD