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Tape for semiconductor wafer processing and semiconductor wafer processing method

A wafer processing and processing method technology, applied in the field of tapes for semiconductor wafer processing, can solve the problems of adhesive residue, leakage, fusion bonding of working discs, etc., and achieve the effect of excellent relaxation

Active Publication Date: 2018-05-01
FURUKAWA ELECTRIC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] However, in the above-mentioned method, when the height of the electrode on the surface of the semiconductor wafer pattern is as large as 10 μm or more, it cannot be completely adhered, so that the above-mentioned problem of leakage cannot be solved.
In addition, when there is a gap between the adhesive and the surface electrode of the semiconductor wafer pattern, there is a problem that since oxygen is contained in the gap, curing inhibition by oxygen occurs when ultraviolet light is irradiated, and adhesion easily occurs. A phenomenon called adhesive residue in which part of the agent remains on the surface of the semiconductor wafer, etc.
Therefore, when the softening point and melting point of the base film layer on the back of the tape for semiconductor wafer processing are low, there is a risk of fusion bonding on the work plate.

Method used

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  • Tape for semiconductor wafer processing and semiconductor wafer processing method
  • Tape for semiconductor wafer processing and semiconductor wafer processing method
  • Tape for semiconductor wafer processing and semiconductor wafer processing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0113] An acrylic copolymer composed of 2-ethylhexyl acrylate (78mol%), 2-hydroxyethyl acrylate (21mol%), and methacrylic acid (1mol%) was prepared, after which the acrylic acid The hydroxyl group in the repeating unit obtained from 2-hydroxyethyl ester reacts with 2-(methacryloyloxy)ethyl isocyanate to obtain a carbon-carbon double bond that is radiation-curable on the side chain of the polymer. Functional methacryloyl acrylic copolymer. In the obtained acrylic copolymer, a trifunctional ultraviolet curing type urethane acrylate oligomer (manufactured by Nippon Synthetic Chemicals Co., Ltd., (trade name) Violet 75 parts by mass of UV-7550B) and 5.0 parts by mass of a photopolymerization initiator ((trade name), manufactured by BASF JAPAN Co., Ltd., Irgacure 184) to obtain an adhesive composition.

[0114] Apply the following adhesive a mainly composed of (meth)acrylic copolymer on a 25 μm polyethylene terephthalate (PET) spacer, and dry it at 120°C for 2 minutes to set the t...

Embodiment 2

[0117] The above-mentioned adhesive a was coated on a 25 μm polyethylene terephthalate spacer, dried at 120°C for 2 minutes to form an adhesive layer with a thickness of 60 μm, and the adhesive layer was bonded to A tape for semiconductor wafer processing was produced on a substrate film made of the above-mentioned urethane acrylate having a thickness of 270 μm.

Embodiment 3

[0119] The above-mentioned adhesive a was coated on a 25 μm polyethylene terephthalate spacer, dried at 120°C for 2 minutes to form an adhesive layer with a thickness of 60 μm, and the adhesive layer was bonded to A tape for semiconductor wafer processing was produced on a substrate film made of the above-mentioned urethane acrylate having a thickness of 100 μm.

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Abstract

The present invention relates to a tape for processing a semiconductor wafer and a method for processing a semiconductor wafer. The tape (10) for processing a semiconductor wafer is bonded to a semiconductor wafer having irregularities on the surface with a height of 80 μm or more for grinding the back surface of the semiconductor wafer. The process, wherein, there is an adhesive layer (3) on the base film (1), and the thickness of the adhesive layer (3) is 25% to 90% of the height of the unevenness on the surface of the semiconductor wafer, and the The thickness of the adhesive layer is 25% or less of the thickness of the entire tape for semiconductor wafer processing (10).

Description

technical field [0001] The present invention relates to a tape for processing semiconductor wafers and a method for processing semiconductor wafers. A semiconductor wafer or the like is fixed for back grinding. [0002] More specifically, the present invention particularly relates to a tape for processing a semiconductor wafer and a method for processing a semiconductor wafer: from the step of bonding the tape to the surface of the semiconductor wafer having protrusions such as electrodes of 10 μm or more on the surface, through the back grinding step, without The semiconductor wafer and the like can be peeled off due to occurrence of adhesive residue from the surface of the semiconductor wafer to the electrode, detachment of the electrode, and the like. Background technique [0003] The process until the semiconductor wafer is processed into a semiconductor chip and mounted on an electronic device is composed of, for example, the following steps: a process of attaching a s...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/683C09J7/38C09J201/00
CPCH01L21/6836H01L2221/68327H01L2221/6834H01L2221/68381C09J2203/326C09J7/38C09J7/385C09J2301/312C09J201/00
Inventor 冈祥文内山具朗
Owner FURUKAWA ELECTRIC CO LTD
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