LED chip having ITO thin film structure and manufacturing method therefor

Abstract

The invention discloses an LED chip having an ITO thin film structure and a manufacturing method therefor. The LED chip comprises a GaAs substrate; a buffer layer, an n-AIGaInP limiting layer, an MQW multiple quantum well active layer, a p-AIGaInP limiting layer, a p-GaP window layer and an AIGaInP coarsened layer are orderly arranged on the GaAs substrate; an ITO thin film layer is arranged on the patterned AIGaInP coarsened layer, a patterned ITO thin film contact layer is arranged on the ITO thin film layer, a metal electrode layer is arranged on the patterned ITO thin film contact layer, and a back electrode layer is arranged below the GaAs substrate. The LED chip is characterized in that the metal electrode layer comprises a main electrode and an expansion electrode, the main electrode is connected onto the patterned AIGaInP coarsened layer, and the expansion electrode is connected onto the ITO thin film layer. According to the LED chip and the manufacturing method therefor, adhesiveness and completeness of the whole metal electrode layer are improved, working voltage stability of a light emitting diode can be ensured, reliability and light emitting efficiency of welding wires of products can be improved, and product quality and yield rates can be greatly enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor light emitting diodes, in particular to an LED chip with an ITO film structure and a preparation method thereof. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of high light efficiency, low energy consumption, long life, high safety, and high environmental protection. They are a lighting method with broad application prospects, and are valued by more and more countries. In the field of high-efficiency solid-state lighting, such as display screens, automotive lights, backlights, traffic lights, landscape lighting, etc. [0003] like figure 1 As shown, a conventional AlGaInP light-emitting diode includes a GaAs substrate 100, a buffer layer 101, an n-AIGaInP confinement layer 102, an MQW multi-quantum well active layer 103, a p-AIGaInP confinement layer 104, and a p-GaP window layer 105, and a metal electrode layer 106 is directly disposed on the p-GaP window layer 105 ...

AI Technical Summary

Problems solved by technology

In practical applications, a layer of ITO film is grown on the p-GaP window layer 105, and then the metal electrode layer 106 is deposited to be used as a pad material. In the bonding wire test to the pad, it is found that the ITO film is easy to fall off, The problem of abnormal shedding of the metal electrode layer 106 has seriously affected its pad performance and chip reliability

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