34results about How to "Reduce contact voltage" patented technology

The invention discloses a method for manufacturing the N electrode of a GaN-based light-emitting diode (LED), and relates to a method for manufacturing the N electrode in an LED manufacturing process. During inductively coupled plasma tabletop etching, only a part of a transverse P-GaN layer, a part of a transverse multi-quantum well luminous layer and a part of a longitudinal N-GaN layer on one side of a GaN epitaxial wafer are removed, a part of the transverse P-GaN layer, a part of the transverse multi-quantum well luminous layer and a part of the longitudinal N-GaN layer are reserved, and form an N tabletop, and the N tabletop, a sidewall on one side of the N tabletop and the N-GaN layer are evaporated by using the metal CrPtAu of the N electrode. A process is simple, stable and reliable, a new process step is not required to be added, routing is facilitated, and the luminous efficiency of the GaN-based LED can be effectively improved.

The invention relates to a cathode carbon block steel bar group applied to an aluminium electrolytic tank structure technology. The cathode carbon block steel bar group has a biggest difference from the universal steel bar group of the cathode block at present that: only one cathode steel bar is arranged in a steel bar groove of the cathode block; and the two sides of a steel bar are both provided with steel bar ramming pastes which are connected with the cathode block.Compared with the prior art, the novel steel bar group of the cathode block adopts a new technical scheme that: two cathode steel bars are arranged in the steel bar groove; the steel bar ramming pastes are arranged between two steel bars, and the outer side faces of the two cathode steel bars are connected with the cathode block through a high-resistant conductive adhesive. The novel steel bar group of the cathode block is used for constructing a cathode lining of an aluminium electrolysis cell and can greatly reduce contact voltage of iron and carbon so as to achieve the aim of reducing power consumption of structural resistance of the aluminium electrolysis cell.

The invention provides a grounding device of a transformer substation containing inlet and outlet cables. The grounding device comprises cable trench support flat steel, indoor leading flat steel, an indoor grounding main line and overlap region tin coatings, wherein the cable trench support flat steel penetrates through a cable trench support stand column, the indoor leading flat steel is in locked connection with the cable trench support flat steel through a first screw, the indoor grounding main line is in locked connection with the indoor leading flat steel through a first screw, and the overlap region tin coatings are arranged between the cable trench support flat steel and the indoor leading flat steel and between the indoor leading flat steel and the indoor grounding main line. The invention discloses the grounding device of the transformer substation containing inlet and outlet cables and a mounting method of the grounding device. According to the invention, since flat steel or a copper stranded wire is used for connecting the grounding device in a cable structure with a transformer substation grounding network, the grounding device in the cable structure can be used for shunting the transformer substation grounding network, thereby reducing the total ground resistance, further reducing the earth current of the transformer substation grounding network and lowering the contact voltage and step voltage of the transformer substation.

The invention discloses a lightweight graphite resistance reduction module and a preparation method thereof. The lightweight graphite resistance reduction module is prepared form expanded graphite, glass fiber mesh cloth, graphite resistance reduction cloth and graphite woven belt material. The lightweight graphite resistance reduction module can be made into a block shape, a plate shape or a cylindrical shape and is high in plasticity and structural strength. The preparation method includes the processes of laying, fixing, pressing, coating and re-pressing. The lightweight graphite resistancereduction module has the advantages of being small in density, light in weight, high in strength, good in water absorption, excellent in electrical conductivity and the like.

The invention relates to an intelligent arc extinction and resonance extinction overvoltage protection integral optimization device and belongs to the technical field of electric network protection equipment. The integral optimization device is characterized by comprising a cabinet body, wherein an isolation switch, a PT (platinum) resonance extinction device, a high-capacity integral overvoltage protector, a single-phase vacuum contactor and a high-voltage current limiting fuse are arranged in the cabinet body, an intelligent controller is arranged on a surface door of the cabinet body, the isolation switch is respectively connected with the PT resonance extinction device, the high-capacity integral overvoltage protector and the high-voltage current limiting fuse, the high-voltage current limiting fuse is connected with the single-phase vacuum contactor, and the intelligent controller is respectively connected with the PT resonance extinction device and the single-phase vacuum contactor. The intelligent arc extinction and resonance extinction overvoltage protection integral optimization device has the advantages that the overvoltage ascending front edge can be effectively gentled, the voltage peak is smoothed, the ultra-low frequency oscillation current is inhibited, the frequent fuse phenomenon of the fuse is eliminated, and the arc grounding voltage is effectively limited.

The invention provides a microcomputer arc-extinguishing resonance-elimination overvoltage protection device and relates to the technical field of electric power system arc-extinguishing and resonance-elimination. The microcomputer arc-extinguishing resonance-elimination overvoltage protection device comprises a high-voltage current limiting fuse, a voltage transformer, a three-phase combined overvoltage protector, a vacuum contactor, a microcomputer arc-extinguishing controller, a high-voltage fuse and a zero-sequence current transformer. Three phase ports of the three-phase combined overvoltage protector are respectively connected with a three-phase high-voltage isolation switch. A grounded end is connected with the voltage transformer and then is grounded. The high-voltage fuse is serially connected between three phase ports of the voltage transformer and the three-phase high-voltage isolation switch. A voltage transformer control end of the microcomputer arc-extinguishing controller is connected with the voltage transformer, and a vacuum contactor control end is connected with the vacuum contactor. Three phase ports of the high-voltage current limiting fuse are respectively connected with the three-phase high-voltage isolation switch, and the other end of the high-voltage current limiting fuse is connected with the vacuum contactor. A grounded end of the vacuum contactor is grounded, and a zero-sequence current transformer is arranged between the grounded end and a grounding point. The overvoltage protection device provided by the invention is high is action speed and is capable of realizing arc-extinguishing and resonance-elimination.

The invention relates to the field of batteries, in particular to a modified positive electrode material, a preparation method thereof and a lithium ion battery. According to the modified positive electrode material disclosed by the invention, the surface of the positive electrode material is coated with lithium orthovanadate, and fluorine elements are doped in the positive electrode material anda surface coating layer. When the modified positive electrode material is used for the lithium ion battery, a stable interface can be formed between the modified positive electrode material and an electrolyte, and the cycle performance, the ionic conductivity and the electronic conductivity of the lithium ion battery are improved.

The utility model relates to a microcomputer arc suppression and harmonic elimination and overvoltage protection device, which relates to the technical field of arc suppression and harmonic elimination in power systems. It includes high-voltage current-limiting fuses, voltage transformers, three-phase combined overvoltage protectors, vacuum contactors, microcomputer arc suppression controllers, high-voltage fuses, zero-sequence current transformers, and three-phase combined overvoltage protectors. The three-phase ports are respectively connected to the three-phase high-voltage isolating switch, the ground terminal is connected to the voltage transformer and then grounded, and a high-voltage fuse is connected in series between the three-phase port of the voltage transformer and the three-phase high-voltage isolating switch, and the voltage mutual inductance of the microcomputer arc suppression controller The control end of the vacuum contactor is connected to the voltage transformer, the control end of the vacuum contactor is connected to the vacuum contactor, the three-phase ports of the high-voltage current-limiting fuse are respectively connected to the three-phase high-voltage isolation switch, the other end is connected to the vacuum contactor, and the grounding end of the vacuum contactor is grounded , A zero-sequence current transformer is set between the ground terminal and the ground point. The invention has fast action speed and is an overvoltage protection device capable of eliminating arcs and eliminating harmonics.

A clamping and jacking apparatus of an aluminum electrolytic cell. A clamping frame (2) is provided around an aluminum frame (1) inside which several conductors are provided, and an anode lifting mechanism (3) used for adjusting the lifting and lowering of the clamping frame (2) is further comprised; several clamp holders (4) are provided between the aluminum frame (1) and the clamping frame (2), and at least one clamping wheel (41) is provided on a single clamp holder (4); several hanging plates (5) or at least one flexible chain (6) matched with the single clamp holder (4) and driven by the at least one clamping wheel (41) on the clamp holder (4) is further comprised; and a part of at least one of the hanging plates (5) or flexible chain (6) is maintained between the clamp holder (4) and the aluminum frame (1). The apparatus can reliably and stably clamp or lift / lower an anode while ensuring the aluminum frame (1) and the anode to be intact, keeps the contact voltage difference between an anode guiding rod and the aluminum frame (1) stable and low, and has a simple structure.

The invention provides a simple and easy grounding grid overhauling device. The simple and easy grounding grid overhauling device comprises an overhauling grounding mechanism and a maintenance electric welding machine capable of maintaining faults, wherein the overhauling grounding mechanism comprises a grounding rod A with a grounding function, a grounding rod B with the grounding function and an insulating clamp with an insulating function; the grounding rod A and the grounding rod B are provided with iron pieces. Aiming at the problem of existing technical equipment that a grounding line is released from a grounding body or a grounding grid to generate electricity leakage; the overhauling grounding mechanism and the maintenance electric welding machine capable of maintaining the faults are adopted, so that the contact voltage and the step voltage can be obviously reduced; a lot of fault power supplies flow into the ground from the grounding grid to a vertical electrode so as to correspondingly reduce the scattered flow of a horizontal conductor.

The invention discloses an LED chip having an ITO thin film structure and a manufacturing method therefor. The LED chip comprises a GaAs substrate; a buffer layer, an n-AIGaInP limiting layer, an MQW multiple quantum well active layer, a p-AIGaInP limiting layer, a p-GaP window layer and an AIGaInP coarsened layer are orderly arranged on the GaAs substrate; an ITO thin film layer is arranged on the patterned AIGaInP coarsened layer, a patterned ITO thin film contact layer is arranged on the ITO thin film layer, a metal electrode layer is arranged on the patterned ITO thin film contact layer, and a back electrode layer is arranged below the GaAs substrate. The LED chip is characterized in that the metal electrode layer comprises a main electrode and an expansion electrode, the main electrode is connected onto the patterned AIGaInP coarsened layer, and the expansion electrode is connected onto the ITO thin film layer. According to the LED chip and the manufacturing method therefor, adhesiveness and completeness of the whole metal electrode layer are improved, working voltage stability of a light emitting diode can be ensured, reliability and light emitting efficiency of welding wires of products can be improved, and product quality and yield rates can be greatly enhanced.

The invention discloses an LED chip with an ITO thin film structure and a preparation method of the LED chip, and belongs to the field of semiconductor light-emitting diodes. The method comprises the following steps: firstly, fabricating an epitaxial wafer of the light-emitting diode; fabricating a patterned dielectric film layer on the epitaxial wafer and fabricating the patterned ITO thin film layer and p-GaP window layer in an etching manner; and fabricating a metal electrode layer on the patterned ITO thin film layer and p-GaP window layer. The metal electrode layer comprises a main electrode and an extended electrode. The patterned ITO thin film layer and p-GaP window layer are adopted as contact layers; and the main electrode as a bonding pad is connected to the p-GaP window layer; and the extended electrode is connected to the ITO thin film layer. The adhesiveness of the overall metal electrode layer is improved; a stable working voltage of a light-emitting device is ensured; the bonding wire reliability of a product is improved; and the quality and the yield of the product are greatly improved.

The invention discloses an arc extinction, harmonic elimination and overvoltage protection device of a microcomputer, and relates to the technical field of arc extinction and harmonic elimination of a power system. The arc extinction, harmonic elimination and overvoltage protection device comprises high-voltage current-limiting fuses, a voltage transformer, a three-phase combined overvoltage protector, vacuum contactors, a microcomputer arc extinction controller, high-voltage fuses and a zero sequence current transformer, wherein three phase ports of the three-phase combined overvoltage protector are separately connected with three phase high-voltage isolation switches, a ground end is connected with the voltage transformer and then is grounded, the high-voltage fuses are connected in series between the three phase ports of the voltage transformer and the three phase high-voltage isolation switches, a voltage transformer control end of the microcomputer arc extinction controller is connected with the voltage transformer, vacuum contactor control ends are connected with the vacuum contactors, the three phase ports of the high-voltage current-limiting fuses are separately connected with the three phase high-voltage isolation switches, the other ends of the high-voltage current-limiting fuses are connected with the vacuum contactors, vacuum contactor ground ends are grounded, and the zero sequence current transformer is arranged between the ground end and a ground point. The overvoltage protection device has the advantages of fast action speed and can be used for arc extinction and harmonic elimination.

The invention provides a grounding device of a transformer substation containing inlet and outlet cables. The grounding device comprises cable trench support flat steel, indoor leading flat steel, an indoor grounding main line and overlap region tin coatings, wherein the cable trench support flat steel penetrates through a cable trench support stand column, the indoor leading flat steel is in locked connection with the cable trench support flat steel through a first screw, the indoor grounding main line is in locked connection with the indoor leading flat steel through a first screw, and the overlap region tin coatings are arranged between the cable trench support flat steel and the indoor leading flat steel and between the indoor leading flat steel and the indoor grounding main line. The invention discloses the grounding device of the transformer substation containing inlet and outlet cables and a mounting method of the grounding device. According to the invention, since flat steel or a copper stranded wire is used for connecting the grounding device in a cable structure with a transformer substation grounding network, the grounding device in the cable structure can be used for shunting the transformer substation grounding network, thereby reducing the total ground resistance, further reducing the earth current of the transformer substation grounding network and lowering the contact voltage and step voltage of the transformer substation.

The invention discloses a voltage-sharing method for a main grounding network of a transformer station, and the method is used for solving a problem of grounding safety. The method is characterized in that the method comprises the following steps: (1), measuring the soil resistivity of the transformer station, and carrying out the structural design of a grounding network; (2), calculating the distribution condition of ground potential rise, and adding a grounding electrode at a corner of the grounding network with the most uneven distribution of ground potential rise; (3), determining the parameter of the grounding electrode, enabling the grounding electrode to be connected to the grounding network, and then carrying out the new calculation till a contact voltage and a step voltage reach set values. According to the invention, the corner of the grounding network is provided with the grounding electrode, and the grounding electrode can effectively reduce the distribution unevenness of the ground potential, thereby effectively reducing the contact voltage and the step voltage, and improving the safety of the grounding network.

The invention provides a method for manufacturing high-brightness flip ultraviolet LED chips. The method has the advantages that the external quantum efficiency of the ultraviolet LED chips and the brightness of the chips can be improved, and contact voltages of the chips can be reduced; Ni / Ag / Al combined reflecting mirrors with high ultraviolet reflectance replace the traditional thick Ag reflecting mirrors, accordingly, the high-brightness flip ultraviolet LED chips are high in ultraviolet reflectance, and reflecting effects of the high-brightness flip ultraviolet LED chips are superior to reflecting effects of the Ag reflecting mirrors in deep ultraviolet regions; ultra-thin Ni / Ag of the high-brightness ultraviolet LED chips can be in ohmic contact with type-P gallium nitride after the ultra-thin Ni / Ag are annealed, accordingly, the contact voltages of the flip chips can be reduced, ultraviolet absorption can be reduced as compared with the traditional thick Ag reflecting mirrors, and the brightness of the chips can be improved.