34results about How to "Reduce contact voltage" patented technology

The invention relates to the technical field of aluminum electrolysis, in particular to a clamping and jacking device of an aluminum electrolytic cell. The problems that the pressure intensity appliedby wheel type clamp holders to an aluminum frame is too large, an anode is prone to being damaged, and the workload and operation cost are increased by adding filler with conductivity are solved. According to the clamping and jacking device of the aluminum electrolytic cell, a clamping frame is arranged around an aluminum frame, wherein multiple conductors are arranged in the aluminum frame, andan anode lifting mechanism used for adjusting the clamping frame to ascend and descend is further included; multiple clamp holders are arranged between the aluminum frame and the clamping frame, and at least one clamping wheel is arranged on each clamp holder; multiple hanging plates or at least one flexible chain matched with each clamp holder and driven by the at least one clamping wheel on thecorresponding clamp holder is further included; and one part of at least one hanging plate or flexible chain is kept between the corresponding clamp holder and the aluminum frame. According to the clamping and jacking device, the aim of firmly and stably clamping the anode or enabling the anode to ascend and descend can be guaranteed on the premise that the aluminum frame and the anode are intact,the contact voltage between an anode guide rod and the aluminum frame is reduced, and the structure is simple.

The invention discloses a method for manufacturing the N electrode of a GaN-based light-emitting diode (LED), and relates to a method for manufacturing the N electrode in an LED manufacturing process. During inductively coupled plasma tabletop etching, only a part of a transverse P-GaN layer, a part of a transverse multi-quantum well luminous layer and a part of a longitudinal N-GaN layer on one side of a GaN epitaxial wafer are removed, a part of the transverse P-GaN layer, a part of the transverse multi-quantum well luminous layer and a part of the longitudinal N-GaN layer are reserved, and form an N tabletop, and the N tabletop, a sidewall on one side of the N tabletop and the N-GaN layer are evaporated by using the metal CrPtAu of the N electrode. A process is simple, stable and reliable, a new process step is not required to be added, routing is facilitated, and the luminous efficiency of the GaN-based LED can be effectively improved.

The invention discloses a method for growing an ultraviolet LED epitaxy structure. A new structural layer and a new surface contact layer are adopted for being doped, light can be prevented from being absorbed through surface materials when ultraviolet light is grown, and contact voltage can be further lowered. According to the method, a traditional magnesium-doped p-type GaN surface contact layer is replaced by the silane-doped n++-type AlzInwGa1-z-wN surface contact layer, the w is larger than 0 and smaller than 0.05, the z is larger than 0 and smaller than 0.9, absorption of GaN materials of the surface contact layer to the ultraviolet light is reduced, and the light emitting efficiency of an epitaxial wafer is improved; meanwhile, low-In-component n++-type AlzInwGa1-z-wN can be in good contact with an ITO current expanding layer of a chip manufacturing technology, heavy doping of n-type silane can be further easily achieved, good ohmic contact with the ITO layer can be formed, and the contact voltage can be reduced.

A grounding module comprises a module body and is characterized in that the formula of the grounding module basically comprises the following components in parts by weight: 13-17 parts of coke powder, 1.5-8 parts of cement, and 0.3-5 parts of graphite powder. The formula of the grounding module further comprises 0.3-5 parts of ion releasing agent. The grounding module has the advantages that the grounding module adopts natural nonmetallic mineral materials which have excellent conductivity and soil compatibility as conducting medium of the grounding module, conductivity of the grounding module is not affected by seasons, so that stable ground resistance is provided, besides, due to the nonmetallic mineral materials, a low resistance zone which is gentle in variation is formed between metal and soil which have huge difference in resistivity, step voltage and contact voltage are lowered, probability of occurrence of ground potential counterattack is reduced, moreover, by matching an ion releaser, electrolyte can durably permeate into the soil in a high concentration mode, the goal that ground resistance can be rapidly lowered is achieved, and characteristics of the grounding module such as density, corrosion resistance, conductivity, compressive strength are enhanced.

The invention discloses an LED chip with an ITO thin film structure and a preparation method of the LED chip, and belongs to the field of semiconductor light-emitting diodes. The method comprises the following steps: firstly, fabricating an epitaxial wafer of the light-emitting diode; fabricating a patterned dielectric film layer on the epitaxial wafer and fabricating the patterned ITO thin film layer and p-GaP window layer in an etching manner; and fabricating a metal electrode layer on the patterned ITO thin film layer and p-GaP window layer. The metal electrode layer comprises a main electrode and an extended electrode. The patterned ITO thin film layer and p-GaP window layer are adopted as contact layers; and the main electrode as a bonding pad is connected to the p-GaP window layer; and the extended electrode is connected to the ITO thin film layer. The adhesiveness of the overall metal electrode layer is improved; a stable working voltage of a light-emitting device is ensured; the bonding wire reliability of a product is improved; and the quality and the yield of the product are greatly improved.

The invention relates to a cathode carbon block steel bar group applied to an aluminium electrolytic tank structure technology. The cathode carbon block steel bar group has a biggest difference from the universal steel bar group of the cathode block at present that: only one cathode steel bar is arranged in a steel bar groove of the cathode block; and the two sides of a steel bar are both provided with steel bar ramming pastes which are connected with the cathode block.Compared with the prior art, the novel steel bar group of the cathode block adopts a new technical scheme that: two cathode steel bars are arranged in the steel bar groove; the steel bar ramming pastes are arranged between two steel bars, and the outer side faces of the two cathode steel bars are connected with the cathode block through a high-resistant conductive adhesive. The novel steel bar group of the cathode block is used for constructing a cathode lining of an aluminium electrolysis cell and can greatly reduce contact voltage of iron and carbon so as to achieve the aim of reducing power consumption of structural resistance of the aluminium electrolysis cell.

The invention provides a grounding device of a transformer substation containing inlet and outlet cables. The grounding device comprises cable trench support flat steel, indoor leading flat steel, an indoor grounding main line and overlap region tin coatings, wherein the cable trench support flat steel penetrates through a cable trench support stand column, the indoor leading flat steel is in locked connection with the cable trench support flat steel through a first screw, the indoor grounding main line is in locked connection with the indoor leading flat steel through a first screw, and the overlap region tin coatings are arranged between the cable trench support flat steel and the indoor leading flat steel and between the indoor leading flat steel and the indoor grounding main line. The invention discloses the grounding device of the transformer substation containing inlet and outlet cables and a mounting method of the grounding device. According to the invention, since flat steel or a copper stranded wire is used for connecting the grounding device in a cable structure with a transformer substation grounding network, the grounding device in the cable structure can be used for shunting the transformer substation grounding network, thereby reducing the total ground resistance, further reducing the earth current of the transformer substation grounding network and lowering the contact voltage and step voltage of the transformer substation.

The invention discloses a lightweight graphite resistance reduction module and a preparation method thereof. The lightweight graphite resistance reduction module is prepared form expanded graphite, glass fiber mesh cloth, graphite resistance reduction cloth and graphite woven belt material. The lightweight graphite resistance reduction module can be made into a block shape, a plate shape or a cylindrical shape and is high in plasticity and structural strength. The preparation method includes the processes of laying, fixing, pressing, coating and re-pressing. The lightweight graphite resistancereduction module has the advantages of being small in density, light in weight, high in strength, good in water absorption, excellent in electrical conductivity and the like.

The invention discloses a low-capacitance high-speed transmission semiconductor surge protection device. The PN (P-type / N-type) junction is a flat PN junction equilibrium junction. Transmitting areas of the semiconductor surge protection device are filled for two times; the thickness of the P-area is increased by 10-20%; the thickness of the N-area is reduced by 10-20%; the N+substrate is a silicon wafer of which the two sides are polished; the thickness of the wafer ranges from 200-300 micrometers; and the resistivity is 20-22%. By adopting a flat PN junction equilibrium junction structure, the density distribution of the current is improved; by adopting the technology of increasing the thickness of the P-area, filling the transmitting area for two times, adopting a field plate and the like, a reverse breakdown voltage of a control tube EB (electron beam) is increased, and the contradiction between the reverse breakdown voltage of an EB junction and beta is solved; through the control to the beta of NPN (N-P-N type) of a quadruple structure thyristor, the problem of controlling the maintaining current and the breakover current is solved; and by decreasing the contact voltage and thinning the N-area, the minor carrier lifetime is increased.

The invention relates to an intelligent arc extinction and resonance extinction overvoltage protection integral optimization device and belongs to the technical field of electric network protection equipment. The integral optimization device is characterized by comprising a cabinet body, wherein an isolation switch, a PT (platinum) resonance extinction device, a high-capacity integral overvoltage protector, a single-phase vacuum contactor and a high-voltage current limiting fuse are arranged in the cabinet body, an intelligent controller is arranged on a surface door of the cabinet body, the isolation switch is respectively connected with the PT resonance extinction device, the high-capacity integral overvoltage protector and the high-voltage current limiting fuse, the high-voltage current limiting fuse is connected with the single-phase vacuum contactor, and the intelligent controller is respectively connected with the PT resonance extinction device and the single-phase vacuum contactor. The intelligent arc extinction and resonance extinction overvoltage protection integral optimization device has the advantages that the overvoltage ascending front edge can be effectively gentled, the voltage peak is smoothed, the ultra-low frequency oscillation current is inhibited, the frequent fuse phenomenon of the fuse is eliminated, and the arc grounding voltage is effectively limited.

A microcomputer arc-extinguishing, harmonic-eliminating and overvoltage-protecting device relates to the technical field of arc extinguishing and harmonic eliminating of an electric power system. The microcomputer arc-extinguishing, harmonic-eliminating and overvoltage-protecting device comprises a high-voltage current-limiting fuse, a voltage transformer, a three-phase combined type overvoltage protector, a vacuum contactor, a microcomputer arc-extinguishing controller, a high-voltage fuse and a zero-sequence current transformer, wherein three-phase ports of the three-phase combined type overvoltage protector are connected with a three-phase high-voltage isolation switch; a grounding terminal of the three-phase combined type overvoltage protector is connected with the voltage transformer and then grounded; the high-voltage fuse is connected in series between three-phase ports of the voltage transformer and the three-phase high-voltage isolation switch; a voltage transformer control terminal of the microcomputer arc-extinguishing controller is connected with the voltage transformer; a vacuum contactor control terminal of the microcomputer arc-extinguishing controller is connected with the vacuum contactor; three-phase ports of the high-voltage current-limiting fuse are respectively connected with the three-phase high-voltage isolation switch, while the other ends of the high-voltage current-limiting fuse are connected with the vacuum contactor; a grounding terminal of the vacuum contactor is grounded; and the zero-sequence current transformer is arranged between the grounding terminal of the vacuum contactor and a grounding point. The overvoltage-protecting device is high in action speed and capable of arc-extinguishing and harmonic-eliminating.

A microcomputer arc-extinguishing, harmonic-eliminating and overvoltage-protecting device relates to the technical field of arc extinguishing and harmonic eliminating of an electric power system. The microcomputer arc-extinguishing, harmonic-eliminating and overvoltage-protecting device comprises a high-voltage current-limiting fuse, a voltage transformer, a three-phase combined type overvoltage protector, a vacuum contactor, a microcomputer arc-extinguishing controller, a high-voltage fuse, and a zero-sequence current transformer, wherein three-phase ports of the three-phase combined type overvoltage protector are respectively connected with a three-phase high-voltage isolation switch; a grounding terminal of the three-phase combined type overvoltage protector is connected with the voltage transformer and then grounded; the high-voltage fuse is connected in series between three-phase ports of the voltage transformer and the three-phase high-voltage isolation switch; a voltage transformer control terminal of the microcomputer arc-extinguishing controller is connected with the voltage transformer; a vacuum contactor control terminal of the microcomputer arc-extinguishing controller is connected with the vacuum contactor; three-phase ports of the high-voltage current-limiting fuse are respectively connected with the three-phase high-voltage isolation switch, while the other ends of the high-voltage current-limiting fuse are connected with the vacuum contactor; a grounding terminal of the vacuum contactor is grounded; and the zero-sequence current transformer is arranged between the grounding terminal of the vacuum contactor and a grounding point. The overvoltage-protecting device is high in action speed and capable of arc-extinguishing and harmonic-eliminating.

The invention provides a microcomputer arc-extinguishing resonance-elimination overvoltage protection device and relates to the technical field of electric power system arc-extinguishing and resonance-elimination. The microcomputer arc-extinguishing resonance-elimination overvoltage protection device comprises a high-voltage current limiting fuse, a voltage transformer, a three-phase combined overvoltage protector, a vacuum contactor, a microcomputer arc-extinguishing controller, a high-voltage fuse and a zero-sequence current transformer. Three phase ports of the three-phase combined overvoltage protector are respectively connected with a three-phase high-voltage isolation switch. A grounded end is connected with the voltage transformer and then is grounded. The high-voltage fuse is serially connected between three phase ports of the voltage transformer and the three-phase high-voltage isolation switch. A voltage transformer control end of the microcomputer arc-extinguishing controller is connected with the voltage transformer, and a vacuum contactor control end is connected with the vacuum contactor. Three phase ports of the high-voltage current limiting fuse are respectively connected with the three-phase high-voltage isolation switch, and the other end of the high-voltage current limiting fuse is connected with the vacuum contactor. A grounded end of the vacuum contactor is grounded, and a zero-sequence current transformer is arranged between the grounded end and a grounding point. The overvoltage protection device provided by the invention is high is action speed and is capable of realizing arc-extinguishing and resonance-elimination.

The invention relates to the field of batteries, in particular to a modified positive electrode material, a preparation method thereof and a lithium ion battery. According to the modified positive electrode material disclosed by the invention, the surface of the positive electrode material is coated with lithium orthovanadate, and fluorine elements are doped in the positive electrode material anda surface coating layer. When the modified positive electrode material is used for the lithium ion battery, a stable interface can be formed between the modified positive electrode material and an electrolyte, and the cycle performance, the ionic conductivity and the electronic conductivity of the lithium ion battery are improved.

The invention discloses an LED chip having an ITO thin film structure and a manufacturing method therefor. The LED chip comprises a GaAs substrate; a buffer layer, an n-AIGaInP limiting layer, an MQW multiple quantum well active layer, a p-AIGaInP limiting layer, a p-GaP window layer and an AIGaInP coarsened layer are orderly arranged on the GaAs substrate; an ITO thin film layer is arranged on the patterned AIGaInP coarsened layer, a patterned ITO thin film contact layer is arranged on the ITO thin film layer, a metal electrode layer is arranged on the patterned ITO thin film contact layer, and a back electrode layer is arranged below the GaAs substrate. The LED chip is characterized in that the metal electrode layer comprises a main electrode and an expansion electrode, the main electrode is connected onto the patterned AIGaInP coarsened layer, and the expansion electrode is connected onto the ITO thin film layer. According to the LED chip and the manufacturing method therefor, adhesiveness and completeness of the whole metal electrode layer are improved, working voltage stability of a light emitting diode can be ensured, reliability and light emitting efficiency of welding wires of products can be improved, and product quality and yield rates can be greatly enhanced.

The invention provides an arc and resonance elimination and overvoltage protection device of a microcomputer, and relates to the technical field of arc and resonance elimination of power systems. The arc and resonance elimination and overvoltage protection device comprises high-voltage current-limiting fuses, a voltage transformer, a three-phase combined overvoltage protector, vacuum contactors, a microcomputer arc elimination controller, high-voltage fuses and a zero-sequence current transformer, wherein three phases of ports of the three-phase combined overvoltage protector are connected with three phases of high-voltage isolating switches respectively and a ground terminal is connected with the voltage transformer and then grounded; the high-voltage fuses are connected between three phases of ports of the voltage transformer and the three phases of high-voltage isolating switches in series; a voltage transformer control terminal of the microcomputer arc elimination controller is connected with the voltage transformer and a vacuum contactor control terminal is connected with the vacuum contactors; three phases of ports of the high-voltage current-limiting fuses are connected with the three phases of high-voltage isolating switches respectively and the other ends are connected with the vacuum contactors; a vacuum contactor ground terminal is grounded; and the zero-sequence current transformer is arranged between the ground terminal and a ground point. The arc and resonance elimination and overvoltage protection device of the microcomputer is high in acting speed and is an overvoltage protection device capable of achieving arc and resonance elimination.

The invention provides a simple and easy grounding grid overhauling device. The simple and easy grounding grid overhauling device comprises an overhauling grounding mechanism and a maintenance electric welding machine capable of maintaining faults, wherein the overhauling grounding mechanism comprises a grounding rod A with a grounding function, a grounding rod B with the grounding function and an insulating clamp with an insulating function; the grounding rod A and the grounding rod B are provided with iron pieces. Aiming at the problem of existing technical equipment that a grounding line is released from a grounding body or a grounding grid to generate electricity leakage; the overhauling grounding mechanism and the maintenance electric welding machine capable of maintaining the faults are adopted, so that the contact voltage and the step voltage can be obviously reduced; a lot of fault power supplies flow into the ground from the grounding grid to a vertical electrode so as to correspondingly reduce the scattered flow of a horizontal conductor.

The invention relates to a microcomputer arc harmonic elimination and overvoltage protection device and belongs to the arc harmonic elimination field of an electrical power system. The protection device comprises a high voltage current limit fuse, a voltage transformer, a three-phase combined overvoltage protection device, a vacuum contactor, a microcomputer arc elimination controller, a high voltage fuse and a zero sequence current transformer, wherein three-phase ports of the three-phase combined overvoltage protection device are respectively connected with a three-phase high voltage isolation switch, a ground end is connected with the voltage transformer and is then in ground connection, the high voltage fuse is connected between three-phase ports of the voltage transformer and the three-phase high voltage isolation switch, a voltage transformer control end of the microcomputer arc elimination controller is connected with the voltage transformer, a vacuum contactor control end is connected with the vacuum contactor, three-phase ports of the high voltage current limit fuse are respectively connected with the three-phase high voltage isolation switch, the other end is connected with the vacuum contactor, a ground end of the vacuum contact is in ground connection, and the zero sequence current transformer is arranged between the ground end and a ground point. The protection device is advantaged in that the motion speed is fast, and arc harmonic elimination effects can be realized.

The invention relates to the field of electrolytic powder processing, in particular to a connector for electrolytic powder processing, an electrolytic powder processing device and a manufacturing method. The connector comprises a flexible conductive body, a first fixing end and a second fixing end, wherein the first fixing end is used for connecting the flexible conductive body with a conductive busbar of the electrolytic powder processing device; and the second fixing end is used for connecting the flexible conductive body with a polar plate of the electrolytic powder processing device. The polar plate and the conductive busbar are connected together by using the connector comprising the flexible conductive body and a fixing piece. The mounting is simple and convenient, the contact is good, the contact voltage can be reduced by 20-95%, and the energy consumption of electrolysis can be reduced by 1-10%. The electrolytic powder processing device is suitable for all electrolytic powder processing and electrolytic refining.

The invention relates to the field of a lightning-protection grounding geographic pole and particularly relates to a graphite lightning-protection grounding module and a preparation method thereof. The graphite lightning-protection grounding module is made from graphite powder, granular graphite and asphalt. The preparation method comprises the steps of material preparing, kneading, blank preparing, roasting, post processing, and the like. The graphite lightning-protection grounding module disclosed by the invention is low in electrical resistivity, relatively high in mechanical strength, resistant to corrosion and long in service life.

The invention discloses an LED chip having an ITO thin film structure and a manufacturing method therefor. The LED chip comprises a GaAs substrate; a buffer layer, an n-AIGaInP limiting layer, an MQW multiple quantum well active layer, a p-AIGaInP limiting layer, a p-GaP window layer and an AIGaInP coarsened layer are orderly arranged on the GaAs substrate; an ITO thin film layer is arranged on the patterned AIGaInP coarsened layer, a patterned ITO thin film contact layer is arranged on the ITO thin film layer, a metal electrode layer is arranged on the patterned ITO thin film contact layer, and a back electrode layer is arranged below the GaAs substrate. The LED chip is characterized in that the metal electrode layer comprises a main electrode and an expansion electrode, the main electrode is connected onto the patterned AIGaInP coarsened layer, and the expansion electrode is connected onto the ITO thin film layer. According to the LED chip and the manufacturing method therefor, adhesiveness and completeness of the whole metal electrode layer are improved, working voltage stability of a light emitting diode can be ensured, reliability and light emitting efficiency of welding wires of products can be improved, and product quality and yield rates can be greatly enhanced.

The invention discloses an arc extinction, harmonic elimination and overvoltage protection device of a microcomputer, and relates to the technical field of arc extinction and harmonic elimination of a power system. The arc extinction, harmonic elimination and overvoltage protection device comprises high-voltage current-limiting fuses, a voltage transformer, a three-phase combined overvoltage protector, vacuum contactors, a microcomputer arc extinction controller, high-voltage fuses and a zero sequence current transformer, wherein three phase ports of the three-phase combined overvoltage protector are separately connected with three phase high-voltage isolation switches, a ground end is connected with the voltage transformer and then is grounded, the high-voltage fuses are connected in series between three phase ports of the voltage transformer and the three phase high-voltage isolation switches, a voltage transformer control end of the microcomputer arc extinction controller is connected with the voltage transformer, vacuum contactor control ends are connected with the vacuum contactors, the three phase ports of the high-voltage current-limiting fuses are separately connected with the three phase high-voltage isolation switches, the other ends of the high-voltage current-limiting fuses are connected with the vacuum contactors, vacuum contactor ground ends are grounded, and the zero sequence current transformer is arranged between the ground end and a ground point. The overvoltage protection device has the advantages of fast action speed and can be used for arc extinction and harmonic elimination.

Electric resistance stone materials and a method for manufacturing the same are provided to reduce a step voltage and a contact voltage and to maintain high electric resistance for a long period of time by securing water repellent characteristic and non-repairing characteristic based on a silicon water repellent layer. A method for manufacturing electric resistance stone materials(1) includes the following: A composition containing (A) components and (B) components is prepared. The composition is attached to the surface of dry natural stone(2) of 5-50mm diameters. A heat treating process is implemented at a temperature between 50 and 250 degrees Celsius. The (A) components are organopolysiloxane containing at least three Si-H bonds in one molecule, and the (B) components are platinum catalysts.

A trigger switch comprises a moving contact, a pre-closing contact, a fixed contact, a fixed contact binding post, an elastic insulation support, a capacitor A side lead, a capacitor, a capacitor B side lead, a moving contact binding post, a moving contact shell hinged hole, a hinged support, a button, a button insulation connecting rod, a button connecting rod movable hole, a shell, a spring, a button connecting rod hinged hole, a moving contact connecting body, a moving contact middle hinged hole, a load, a lead from a power source to the moving contact binding post, a lead from the fixed contact binding post to a load B side, a lead from the load A side to the power source, a power source A binding post and a power source B binding post. According to the trigger switch, on the basis of the capacitor capacitive reactance formula that Xc=1 / 2 pi fc, by means of the voltage reduction current limitation principle of the capacitor, the contact voltage of the contacts is lowered fundamentally, so that the contact electric spark strength is lowered, and contact points are protected.

The invention discloses an arc extinction, harmonic elimination and overvoltage protection device of a microcomputer, and relates to the technical field of arc extinction and harmonic elimination of a power system. The arc extinction, harmonic elimination and overvoltage protection device comprises high-voltage current-limiting fuses, a voltage transformer, a three-phase combined overvoltage protector, vacuum contactors, a microcomputer arc extinction controller, high-voltage fuses and a zero sequence current transformer, wherein three phase ports of the three-phase combined overvoltage protector are separately connected with three phase high-voltage isolation switches, a ground end is connected with the voltage transformer and then is grounded, the high-voltage fuses are connected in series between the three phase ports of the voltage transformer and the three phase high-voltage isolation switches, a voltage transformer control end of the microcomputer arc extinction controller is connected with the voltage transformer, vacuum contactor control ends are connected with the vacuum contactors, the three phase ports of the high-voltage current-limiting fuses are separately connected with the three phase high-voltage isolation switches, the other ends of the high-voltage current-limiting fuses are connected with the vacuum contactors, vacuum contactor ground ends are grounded, and the zero sequence current transformer is arranged between the ground end and a ground point. The overvoltage protection device has the advantages of fast action speed and can be used for arc extinction and harmonic elimination.

The invention discloses a voltage-sharing method for a main grounding network of a transformer station, and the method is used for solving a problem of grounding safety. The method is characterized in that the method comprises the following steps: (1), measuring the soil resistivity of the transformer station, and carrying out the structural design of a grounding network; (2), calculating the distribution condition of ground potential rise, and adding a grounding electrode at a corner of the grounding network with the most uneven distribution of ground potential rise; (3), determining the parameter of the grounding electrode, enabling the grounding electrode to be connected to the grounding network, and then carrying out the new calculation till a contact voltage and a step voltage reach set values. According to the invention, the corner of the grounding network is provided with the grounding electrode, and the grounding electrode can effectively reduce the distribution unevenness of the ground potential, thereby effectively reducing the contact voltage and the step voltage, and improving the safety of the grounding network.

The invention provides a method for manufacturing high-brightness flip ultraviolet LED chips. The method has the advantages that the external quantum efficiency of the ultraviolet LED chips and the brightness of the chips can be improved, and contact voltages of the chips can be reduced; Ni / Ag / Al combined reflecting mirrors with high ultraviolet reflectance replace the traditional thick Ag reflecting mirrors, accordingly, the high-brightness flip ultraviolet LED chips are high in ultraviolet reflectance, and reflecting effects of the high-brightness flip ultraviolet LED chips are superior to reflecting effects of the Ag reflecting mirrors in deep ultraviolet regions; ultra-thin Ni / Ag of the high-brightness ultraviolet LED chips can be in ohmic contact with type-P gallium nitride after the ultra-thin Ni / Ag are annealed, accordingly, the contact voltages of the flip chips can be reduced, ultraviolet absorption can be reduced as compared with the traditional thick Ag reflecting mirrors, and the brightness of the chips can be improved.