Method for growing ultraviolet LED epitaxy structure

Abstract

The invention discloses a method for growing an ultraviolet LED epitaxy structure. A new structural layer and a new surface contact layer are adopted for being doped, light can be prevented from being absorbed through surface materials when ultraviolet light is grown, and contact voltage can be further lowered. According to the method, a traditional magnesium-doped p-type GaN surface contact layer is replaced by the silane-doped n++-type AlzInwGa1-z-wN surface contact layer, the w is larger than 0 and smaller than 0.05, the z is larger than 0 and smaller than 0.9, absorption of GaN materials of the surface contact layer to the ultraviolet light is reduced, and the light emitting efficiency of an epitaxial wafer is improved; meanwhile, low-In-component n++-type AlzInwGa1-z-wN can be in good contact with an ITO current expanding layer of a chip manufacturing technology, heavy doping of n-type silane can be further easily achieved, good ohmic contact with the ITO layer can be formed, and the contact voltage can be reduced.

Description

technical field [0001] The invention belongs to the field of semiconductor optoelectronics and relates to a method for growing an epitaxial structure of a violet LED. Background technique [0002] With the development of LED applications, the market demand for ultraviolet LEDs is increasing. Ultraviolet LEDs with emission wavelengths covering 210-400nm have advantages that traditional ultraviolet light sources cannot match. Ultraviolet LEDs can not only be used in the field of lighting, but also can replace traditional ultraviolet mercury lamps containing toxic and harmful substances in biomedicine, anti-counterfeiting identification, air and water purification, biochemical detection, and high-density information storage. Due to the limitations of the growth material itself and the difficulty of doping, the luminous efficiency is generally low and the voltage is generally high. How to reduce the difficulty of doping and the difficulty of material growth is the focus of curre...

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Problems solved by technology

Ultraviolet LEDs can not only be used in the field of lighting, but also can replace traditional ultraviolet mercury lamps containing toxic and harmful substances in biomedicine, anti-counterfeiting identification, air and water purification, biochemical detection, and high-density information storage. Due to the limitations of the growth material itself and the difficulty of doping, the luminous efficiency is generally low, and the voltage is generally high. How to reduce the difficulty of doping and the difficulty of material growth is the focus of current research

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