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Photosynthetic apparatus

A photosynthesis and semiconductor technology, applied in reduction and oxidation devices, photovoltaic power generation, electrolytic organic production, etc., can solve problems such as attenuation and widening of the interval between water tanks 920

Active Publication Date: 2016-11-16
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And, if H 2 O oxidation electrode 930 and CO 2 The size of reduction electrode 940 becomes larger, then reaches H 2 O oxidation electrode 930 and CO 2 The light in the region near the bottom surface of the water tank 920 of the reduction electrode 940 is further attenuated, and the interval at which the water tanks 920 need to be arranged also becomes wider.

Method used

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no. 1 Embodiment approach 〕

[0060] Incidentally, as figure 2 As shown in (c), in the solar spectrum, the intensity of light having a wavelength of 0.3 μm to 1.1 μm is high. Since this wavelength range corresponds to the band gap of semiconductor materials such as Si, GaAs, and GaN, it is possible to manufacture a light synthesis device using these semiconductor materials.

[0061] (photosynthesis device)

[0062] Next, for the photosynthesis device in this embodiment, based on image 3 Be explained. image 3 It is a cross-sectional view of the photosynthesis device in this embodiment. In the light synthesis device in the present embodiment, grooves 20 are formed on the surface of a semiconductor substrate 10 made of Si (silicon). The water 100 containing carbon dioxide is supplied to the tank part 20, and the tank part 20 is a microchannel water tank which becomes a flow path through which the water 100 containing carbon dioxide flows. In this embodiment, the groove portion 20 is formed of a groove...

no. 2 Embodiment approach 〕

[0092]Next, a second embodiment will be described. Incidentally, in the photosynthesis device in the first embodiment, Si is used as a semiconductor material, but similar to solar cells and the like, since Si is an indirect transition type semiconductor, solar light energy conversion efficiency decreases. On the other hand, direct transition semiconductors such as GaAs, InP, and GaN are superior in solar light energy conversion efficiency to Si. In the case of using Si as the semiconductor material, ion implantation is used to form the pn junction, but in the case of using GaAs, InP, GaN, etc. as the semiconductor material, the pn junction is formed by regrowth.

[0093] (Manufacturing method of photosynthetic device)

[0094] Next, for the manufacturing method of the photosynthetic device in this embodiment, based on Figure 17 ~ Figure 24 Be explained. As an example, the photosynthesis device in this embodiment is a pn junction type photosynthesis device using GaN as a se...

no. 3 Embodiment approach 〕

[0112] Next, a third embodiment will be described. The photosynthesis device in this embodiment is a tandem junction type photosynthesis device in which an n-type region and a p-type region are formed by stacking a plurality of semiconductor layers with different band gaps.

[0113] based on Figure 25 The photosynthesis device in this embodiment will be described. also, Figure 25 (a) is a plan view of the transmissive surface coating film 170 in the photosynthesis device in this embodiment, Figure 25 (b) is in Figure 25 (a) The cross-sectional view cut|disconnected by the dashed-dotted line 25A-25B.

[0114] (photosynthesis device)

[0115] In this embodiment, a GaN layer 111 is formed on a semiconductor substrate 110, and an n-type region 210 and a p-type region formed by laminating materials with different bandgaps are formed on both sides of a groove portion 120 formed on the GaN layer 111. 220 photosynthesis device. Specifically, n-type region 210 is formed of s...

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Abstract

This photosynthetic apparatus is characterized by comprising: a groove portion that is formed in a semiconductor substrate; a first conductivity type region that is formed on one lateral surface of the groove portion in the semiconductor substrate; a second conductivity type region that is formed on the other lateral surface of the groove portion in the semiconductor substrate; an oxidation electrode that is formed in contact with the first conductivity type region on one lateral surface of the groove portion; a reduction electrode that is formed in contact with the second conductivity type region on the other lateral surface of the groove portion; and a proton partition membrane that is formed in the central part of the groove portion. This photosynthetic apparatus is also characterized in that: water containing carbon dioxide is supplied to the groove portion; and oxygen and hydrogen ions are produced from the water at the oxidation electrode by irradiating the oxidation electrode or the reduction electrode with light, and the thus-produced hydrogen ions permeate through the proton partition membrane and react with carbon dioxide at the reduction electrode, thereby producing formic acid.

Description

technical field [0001] The present invention relates to photosynthetic devices. Background technique [0002] Now, as a greenhouse gas, carbon dioxide (CO 2 ) is increasing at a rate of 2ppm per year, and global warming is in a severe situation. If the concentration of carbon dioxide continues to increase like this, it is predicted that 15% to 34% of biological species will become extinct by 2050 AD. Such an increase in carbon dioxide, which affects global warming, is mainly produced in advanced countries such as North America, the EU, Japan, and China, and countries that produce large amounts of carbon dioxide are heavily responsible. Under such circumstances, in order to reduce the emission of carbon dioxide and absorb the emitted carbon dioxide, it will be difficult to reduce the concentration of carbon dioxide to the current level by 2050 unless approximately one-third of the earth's land area is afforested. [0003] As a method for solving this problem, artificial ph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B3/04C25B9/00C25B3/25C25B9/23
CPCY02E10/542Y02E60/36C25B1/55C25B1/04C25B9/73C25B9/65C25B9/23C25B3/25H01G9/205H01G9/22
Inventor 冈本直哉
Owner FUJITSU LTD
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