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led chip and its manufacturing method

A technology of LED chip and manufacturing method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of LED chip use voltage increase, LED chip performance impact, etc., to reduce the working voltage, improve working performance, and simplify the process The effect of steps

Active Publication Date: 2018-08-28
ENRAYTEK OPTOELECTRONICS
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  • Abstract
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  • Application Information

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Problems solved by technology

However, this may affect other performances of the LED chip, for example, resulting in an increase in the operating voltage of the LED chip

Method used

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  • led chip and its manufacturing method
  • led chip and its manufacturing method

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Embodiment Construction

[0047] In the prior art, in order to increase the efficiency of the flip-chip LED chip, some materials with high reflectivity are used as electrodes of the LED chip. However, changing the electrode material of the LED chip will affect other properties of the LED chip, for example, increase the contact resistance between the material layers inside the LED chip, and thus increase the overall operating voltage of the LED chip. For this reason, in the prior art, generally only one type of electrode (for example, only the P electrode) uses the above-mentioned material with high reflectivity, and the other type of electrode still chooses ordinary materials. However, this is not conducive to increasing the reflectivity of the electrodes, which in turn is not conducive to increasing the efficiency of the LED chip; in addition, this method needs to form two types of electrodes separately, which also increases the difficulty and cumbersomeness of manufacturing.

[0048]For this reason, ...

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Abstract

The present invention provides a LED chip and a manufacturing method thereof. The manufacturing method comprises: providing a substrate, an N-type semiconductor layer, an active layer and a P-type semiconductor layer; forming first and second transparent conductive layers; forming metal reflective layers including sliver having a work function larger than the transparent conductive layers, wherein the metal reflective layer located on the first transparent conductive layer is a P electrode, and the metal reflective layer located on the second transparent conductive layer is an N electrode; the LED chip includes the substrate, the N-type semiconductor layer, the active layer, the P-type semiconductor layer and first and second transparent conductive layers; and the metal reflective layer located on the first transparent conductive layer is the P electrode, and the metal reflective layer located on the second transparent conductive layer is the N electrode. The barrier height between the P-type semiconductor layer and N-type semiconductor layer and the metal reflective layers are reduced so as to reduce the ohmic contact between the P-type semiconductor layer and N-type semiconductor layer and the metal reflective layers, decrease the work voltage of the LED chip and increase the luminescence efficiency of The LED chip.

Description

technical field [0001] The invention relates to the technical field of LED manufacturing, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] A light emitting diode (Light Emitting Diode, LED) is a semiconductor solid-state light-emitting device, which is made using the principle of semiconductor PN junction electroluminescence. LED devices have good photoelectric properties such as low turn-on voltage, small size, fast response, good stability, long life, and no pollution. Therefore, they are widely used in outdoor and indoor lighting, backlighting, display, traffic indication and other fields. [0003] Generally speaking, the LED chip structure is divided into three types: horizontal structure (front chip), vertical structure (vertical structure chip) and flip chip structure (flip chip); among them, the P and N electrodes in the flip structure LED chip are located On the same side of the light-emitting area, the light emitted by ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/46H01L33/42
CPCH01L33/42H01L33/46H01L2933/0016H01L2933/0025
Inventor 朱秀山徐慧文李智勇朱广敏余婷婷张宇李起鸣
Owner ENRAYTEK OPTOELECTRONICS