Method for Removing Fine Powder of Cutting Edge of Crystalline Silicon Wafer

Abstract

The invention discloses a method for removing fine powder in crystal silicon wafer cutting edge materials, and aims at solving the problems that as for the existing fine powder in the crystal silicon wafer cutting edge materials, the removing period is long, the efficiency is low, thorough removing is difficult, and the water resource consumption amount is large. The method includes the following steps that the crystal silicon wafer cutting edge materials to be treated are screened to be loose through a high frequency vibrating screen, and then are led into a number dividing machine to conduct winnowing pretreatment on the fine powder in the crystal silicon wafer cutting edge materials, and a grading wheel and an air adjusting plate are used for conducting winnowing on the fine powder two times; the crystal silicon wafer cutting edge materials obtained after pretreatment and deionized water are evenly mixed and then pumped into a siphon cylinder to be subjected to water treatment; the fine powder is continuously removed through the processes of dispersing agent adding, stirring, stewing sedimentation, vacuum fine powder extraction, water replenishing and the like; and finally the crystal silicon wafer cutting edge materials without the fine powder are obtained after centrifugal dewatering and drying treatment. According to the method, operation is easy and convenient, the method has the beneficial effects of being short in fine powder removing period, thorough in removing, high in removing efficiency and small in water resource consumption amount, and is very suitable for industrial application and popularization.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon wafer cutting, and in particular relates to a method for removing fine powder of crystalline silicon wafer cutting blades. Background technique [0002] The cutting edge of crystalline silicon wafers is a finer silicon carbide solid micropowder particles with a particle size usually between 5 and 15 μm. It has a hard texture and sharp edges and corners. Polysilicon cut into pieces. Crystalline silicon wafer cutting blades are often fine silicon carbide powder particles below the particle size standard due to excessive grinding in the process of Raymond mill grinding preparation—that is, the generation of fine powder, which makes the crystal silicon wafer cutting edge The cutting performance of the material decreases during the process of slicing, so certain measures need to be taken during the production process to remove the fine powder in the cutting edge material of the crystal sil...

AI Technical Summary

Problems solved by technology

The above method has the problems of long fine powder removal cycle, low fine powder removal efficiency, difficulty in removing fine powder completely, and large water resource consumption