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Power supply reverse connection protection circuit

A technology of protection circuit and power reverse connection, applied in emergency protection circuit devices, circuits, electrical components, etc., can solve the problem of small conduction voltage drop, and achieve the effect of improving integration.

Active Publication Date: 2016-12-14
上海能埔电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] Aiming at the problem of raising the minimum starting voltage of the circuit existing in the existing on-chip integrated power reverse connection protection circuit, the purpose of the present invention is to provide a power supply reverse connection protection circuit with a small conduction voltage drop

Method used

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Embodiment Construction

[0027] In order to make it easy to understand the technical means, creation features, achieved goals and effects of the present invention, the present invention will be further described below with reference to the specific figures.

[0028] This scheme achieves and overcomes the shortcomings of the traditional power supply reverse connection protection diode structure by using the structure of the P-type MOS tube and using its switching characteristics.

[0029] Accordingly, the solution provides a power supply reverse connection protection circuit that can be built in a chip, and the protection circuit mainly includes two P-type MOSFETs, a diode and a resistor.

[0030] Among them, two P-type MOSFETs cooperate to form the main body of the entire protection circuit for unidirectional conduction current.

[0031] The diode cooperates with the two P-type MOSFETs for reverse clamping, providing voltage clamping protection for the two P-type MOSFETs.

[0032] The resistors coope...

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Abstract

The invention discloses a power supply reverse connection protection circuit. The protection circuit comprises two P-type MOSFETs, diodes and resistors, the two P-type MOSFETs mutually cooperate to form an unidirectional switch-on current, the diodes are used for performing back clamping and providing voltage clamping protection for the two P-type MOSFETs, and the resistors are used for establishing grid potential of the two P-type MOSFETs. The power supply reverse connection protection circuit is advantageous in that the structure is simple, the starting voltage and the switch-on power consumption are low, the heat generation is low, and the ESD-resistant capability is high.

Description

technical field [0001] The invention relates to integrated circuit technology, in particular to a power supply reverse connection protection technology in an integrated circuit. Background technique [0002] In the CMOS (Complementary Metal-Oxide-Semiconductors, Complementary Metal-Oxide-Semiconductors) process, the PMOS (P-channel Metal-Oxide-Transistor) transistor is made in the N-type doped well region (Nwell), the Nwell and the P-type liner A large-area parasitic diode is formed between the bottoms. Under the correct application conditions, the parasitic diode is reverse biased and the bias voltage is not higher than its reverse breakdown voltage, and an effective isolation is formed inside the chip to ensure that the chip works within the normal voltage range. However, if the user of the chip accidentally reverses or inserts the ground wire and the power wire, the 'Vin' terminal of the chip is connected to the low-potential node (GND) of the external power supply, and ...

Claims

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Application Information

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IPC IPC(8): H02H11/00H01L27/02
CPCH01L27/0255H01L27/0285H02H11/002
Inventor 古鸽王家斌黄绪江
Owner 上海能埔电子有限公司
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