A kind of SM-CO base permanent magnetic film and preparation method thereof
A sm-co and thin-film technology, applied in the direction of magnetic layer, base/intermediate layer, magnetic film to substrate, etc., can solve problems such as low performance and shedding performance, and achieve enhanced chemical bonding, reduced cracking, and improved binding effect
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Embodiment 1
[0039] In this embodiment, the substrate of the Sm-Co based permanent magnet thin film is Si substrate, the buffer layer is between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 0.5 μm. The buffer layer has a four-layer structure, one layer is a Cu thin film layer with a thickness of 5 nm on the surface of the substrate, a W-Cu thin film layer on the surface of the Cu thin film layer with a thickness of 50 nm; A Ni-W film layer with a thickness of 20nm; a Ni film layer with a thickness of 10nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 0.5 μm located on the surface of the Ni film layer.
[0040] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:
[0041] Step 1: Prepare Si substrate;
[0042] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the spu...
Embodiment 2
[0049] In this embodiment, the Sm-Co-based permanent magnet thin film uses Si(100) as the substrate, a buffer layer between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 60 μm. The buffer layer has a four-layer structure, one layer is a Cu film layer with a thickness of 10nm on the surface of the substrate, a W-Cu film layer with a thickness of 25nm on the surface of the Cu film layer; A Ni-W film layer with a thickness of 50nm; a Ni film layer with a thickness of 35nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 60μm located on the surface of the Ni film layer.
[0050] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:
[0051] Step 1: Prepare Si substrate;
[0052] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the sputtering temperature is room...
Embodiment 3
[0059] In this embodiment, the Sm-Co-based permanent magnet thin film uses Si(100) as the substrate, a buffer layer between the substrate and the Sm-Co thin film layer, and the thickness of the Sm-Co thin film layer is 100 μm. The buffer layer has a four-layer structure, one layer is a Cu film layer with a thickness of 20m on the surface of the substrate, a W-Cu film layer with a thickness of 200nm on the surface of the Cu film layer; A Ni-W film layer with a thickness of 100nm; a Ni film layer with a thickness of 50nm located on the surface of the Ni-W film layer; a Sm-Co film layer with a thickness of 100μm located on the surface of the Ni film layer.
[0060] The preparation method of the above-mentioned Sm-Co-based permanent magnetic film is as follows:
[0061] Step 1: Prepare Si(100) substrate;
[0062] Step 2: Using magnetron sputtering equipment, using high-purity Ar gas as the working gas, the background vacuum is better than 5.0×10 -6 Pa, the sputtering temperature...
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