Packaging structure and manufacturing method thereof
A technology of packaging structure and manufacturing method, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve the problems of high manufacturing cost, numerous process steps, affecting productivity and yield, etc., to improve product yield and Productivity, simplifying process steps, reducing the effect of manufacturing costs
Active Publication Date: 2016-12-21
SEMICON MFG INT (SHANGHAI) CORP
View PDF5 Cites 2 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
[0018] The purpose of the present invention is to provide a packaging structure and its manufacturing method to solve the problems in the prior art that there are many process steps for manufacturing the packaging structure, resulting in high manufacturing costs and affecting production capacity and yield.
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] The encapsulation structure proposed by the present invention and its manufacturing method will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.
[0047] Please refer to Figure 2i , which is a structural schematic diagram of the package structure of the embodiment of the present invention. Such as Figure 2i As shown, the manufacturing method of the packaging structure includes the following steps:
[0048] providing a substrate 210;
[0049] forming a metal layer 220 on the substrate 210;
[0050] forming a patterned conductive layer 230 on the metal layer 220, the conductive layer 2...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| Thickness | aaaaa | aaaaa |
| Thickness | aaaaa | aaaaa |
Login to View More
Abstract
The invention provides a packaging structure and a manufacturing method thereof. The manufacturing method of the packaging structure comprises the following steps: providing a substrate; forming a metal layer on the substrate; forming a graphical conductive layer on the metal layer, wherein the conductive layer has a raised part; etching the part of the metal layer not covered by the conductive layer to expose part of the substrate; forming a graphical dielectric layer on the conductive layer and on the exposed substrate, wherein the dielectric layer does not cover the raised part of the conductive layer; and forming a spherical bump on the raised part. According to the packaging structure and the manufacturing method thereof provided by the invention, a double-exposure technology is adopted, and an under bump metallization (UBM) layer and a re-distribution layer (RDL) are formed at the same time in one photo-etching process, so that the process steps are simplified, the manufacturing cost is reduced, and the product yield and production capacity are improved.
Description
technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a packaging structure and a manufacturing method thereof. Background technique [0002] The packaging structure of an integrated circuit usually includes a ball bump (Bump), which is used as a contact point on a substrate to realize electrical contact with a contact point on another substrate (such as a chip, a packaging substrate, or a printed circuit board, etc.). connect. In some cases, the gap between the chip and the substrate is relatively large, so the height of the bump needs to be increased to offset the gap between the chip and the substrate. Currently, the industry usually arranges an under bump metallization (UBM) layer under the bump to increase the height of the bump. [0003] Please refer to Figure 1k , which is a structural schematic diagram of a packaging structure in the prior art. Such as Figure 1k As shown, the existing packaging structure ...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More IPC IPC(8): H01L23/488H01L21/48
CPCH01L2224/11
Inventor 张纪阔
Owner SEMICON MFG INT (SHANGHAI) CORP