Power device preparation method and power device

Abstract

The invention provides a manufacturing method of a power device and the power device. The manufacturing method comprises the following steps of successively forming a sinking area, a field oxide layer and a gate oxide layer on a substrate provided with an epitaxial layer; successively forming an N-type base area of an anti-static diode unit and a silicon gate structure of a power unit on the field oxide layer; after the N-type base area is formed, successively forming a body area, a drift area, a drain area, a source area and a P-type ion area so as to complete manufacturing of the power unit; and after the manufacturing of the power unit is completed, successively forming a cathode ion area, an anode ion area, an oxide layer and a metal silicide on the N-type base area so as to complete manufacturing of the power device. In the technical scheme of the invention, through forming the power device of the anti-static diode unit possessing the N-type base area, a condition that the metal silicide is formed on a polycrystalline silicon layer of the anti-static diode unit so that an anti-static protection effect of the anti-static diode unit is failed is effectively avoided so that reliability of the power device is guaranteed.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular, to a method for preparing a power device and a power device. Background technique [0002] At present, power devices are widely used in the fields of mobile phone base stations, radio and television, and microwave radar. The electrostatic diode unit has the function of anti-static protection for power devices. The structure of the power device in the related art is as figure 1 As shown, the metal silicide is usually formed by a self-aligned process, but at the same time as the metal silicide is formed, there is also the risk of forming a metal silicide on the polysilicon layer of the anti-static diode unit. When the metal silicide is formed on the polysilicon layer , the anti-static protection effect of the anti-static diode unit on the power device will be invalid. In addition, in the related technology, P-type ions are implanted into the P-type base region of the anti-st...

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Problems solved by technology

The structure of the power device in the related art is as figure 1 As shown, the metal silicide is usually formed by a self-aligned process, but at the same time as the metal silicide is formed, there is also the risk of forming a metal silicide on the polysilicon layer of the anti-static diode unit. When the metal silicide is formed on the polysilicon layer , the anti-static protection effect of the anti-static diode unit on the power device will be invalid. In addition, in the related technology, P-type ions are implanted into the P-type base region of the anti-static diode unit to form an N+ / P- junction, but N+ The discharge capacity of the / P-junction is not very good, resulting in the anti-static diode unit having a poor anti-static protection effect on power devices

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