Schottky contact and preparation method thereof

Abstract

The present invention relates to a schottky contact and a preparation method thereof. The schottky contact comprises a p-InP substrate, an insulating medium layer and an electrode metal layer. An ohmic contact metal layer grows on the p-InP substrate, and the insulating medium layer is MoO<3>. In preparation, firstly, an ohmic contact metal grows on the p-InP substrate so as to form a peripheral annular electrode; then, a MoO<3> layer of 3-4nm thick is deposited on the p-InP substrate; and finally, an anode electrode is deposited on the MoO<3> layer. MoO<3> is used as the insulating medium layer, and the schottky contact has an obvious barrier enhancement effect, so that the Fermi level pinning effect of the p-InP material can be prevented effectively, as a result, Al / p-InP schottky contact has better rectification performance. Ideal factors at the temperature of 310K are still below 2.2. Compared with other medium layer materials, the schottky contact has smaller ideal factors under the same barrier enhancement condition, so that corresponding schottky device has better device features.

Description

technical field [0001] The invention relates to a metal / semiconductor junction, in particular to a Schottky contact and a preparation method thereof. Background technique [0002] In recent years, since the III-V semiconductor InP has such a direct energy band structure, high electron mobility (2.5×10 7 cm / s), long absorption communication wavelength (1.31μm, 1.55μm), it has been widely used in high-speed optoelectronic devices in the near-infrared band, and high-power microwave devices. In the research of such semiconductor devices, InP and metal Contact is often essential and very important. [0003] Generally speaking, semiconductor / metal contacts can be divided into ohmic contacts and Schottky contacts according to the rectification characteristics of their contacts. For an ohmic contact without rectification characteristics, we can approximately regard it as a zero-resistance contact regardless of its applied voltage level; for a Schottky contact with a rectification ...

AI Technical Summary

Problems solved by technology

However, the Schottky contact of the MIS sandwich structure prepared by using these materials often does not have good heat resistance and cannot obtain a good barrier enhancement effect or has a large ideality factor.

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