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Photoelectric detector and preparation method thereof

A photodetector and electrode layer technology, applied in the field of photodetection, can solve problems such as high dark current, and achieve the effects of improving collection, avoiding Fermi level pinning effect, and reducing dark current

Active Publication Date: 2022-06-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the metal-semiconductor interface of such devices is often chemically disordered and has high defect states, often exhibiting high dark current

Method used

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  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof
  • Photoelectric detector and preparation method thereof

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Embodiment Construction

[0031] In order to make the objectives, technical solutions and advantages of the present disclosure more clearly understood, the present disclosure will be further described in detail below with reference to the specific embodiments and the accompanying drawings. However, the present disclosure can be embodied in different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity, and like reference numerals refer to like elements throughout.

[0032] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood, however, that these descriptions are exemplary only, and are not intended to limit the scope of the...

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Abstract

A photodetector includes: a substrate; the electrode layer is formed on the substrate and comprises two interdigital units, and a plurality of interdigitals of the two interdigital units extend oppositely and are insulated from each other; and the micron layer covers the plurality of interdigitals of the plurality of interdigital units, and the interdigitals of the interdigital units are combined with the micron layer based on Van der Waals force. The Van der Waals force eliminates the defects of chemical disorder and high defect state at the interface of the metal electrode layer and the nano layer, avoids the Fermi level pinning effect, reduces dark current, and improves light extraction and light current collection.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection in the field of semiconductor technology, in particular to a photodetector based on van der Waals force and a preparation method thereof. Background technique [0002] Ultraviolet photodetectors are widely used in electronic communication, biomedicine, chemical analysis, imaging, daily life detection, deep-sea exploration and other fields. In recent years, metal halide perovskite materials have become a popular choice for the preparation of high-performance ultraviolet photodetectors due to their large optical absorption coefficient, long charge diffusion length, high and balanced carrier transport capability, and tunable band gap. The ideal candidate material has made great progress in ultraviolet photodetectors. [0003] Traditional perovskite-based UV photodetectors can be mainly divided into the following categories: photoconductive, PN junction, multilayer heterojunction, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/032H01L31/0392H01L31/09H01L31/18
CPCH01L31/09H01L31/18H01L31/0224H01L31/0352H01L31/032H01L31/0392Y02P70/50
Inventor 沈国震李营田越杨雅茜陈娣
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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