MOS (Metal-Oxide-Semiconductor) transistor and formation method thereof
A technology of MOS transistors and transistors, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor performance of MOS transistors, and achieve the effect of improving performance
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[0032] The MOS transistors formed in the prior art have poor performance and reliability.
[0033] Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of the formation process of the MOS transistor in an embodiment of the present invention.
[0034] refer to figure 1 , provide a semiconductor substrate 100, the surface of the semiconductor substrate 100 has a dummy gate structure 110 and an interlayer dielectric layer 120, the dummy gate structure 110 includes a dummy gate dielectric layer 111 and a dummy gate structure located on the surface of the dummy gate dielectric layer 111 The gate electrode layer 112 , and the dummy gate structure 110 penetrates through the thickness of the interlayer dielectric layer 120 .
[0035] refer to figure 2 , remove the dummy gate structure 110 (refer to figure 1 ), forming an opening 113 exposing the surface of the semiconductor substrate 100 .
[0036] refer to image 3 , forming a cover opening 123 (refer to ...
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