MOS (Metal-Oxide-Semiconductor) transistor and formation method thereof

A technology of MOS transistors and transistors, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of poor performance of MOS transistors, and achieve the effect of improving performance

Active Publication Date: 2017-01-11
SEMICON MFG INT (SHANGHAI) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] However, prior art MOS transistors with high-K dielectric layers and metal gate structures perform poorly

Method used

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  • MOS (Metal-Oxide-Semiconductor) transistor and formation method thereof
  • MOS (Metal-Oxide-Semiconductor) transistor and formation method thereof
  • MOS (Metal-Oxide-Semiconductor) transistor and formation method thereof

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Embodiment Construction

[0032] The MOS transistors formed in the prior art have poor performance and reliability.

[0033] Figure 1 to Figure 4 It is a schematic cross-sectional structure diagram of the formation process of the MOS transistor in an embodiment of the present invention.

[0034] refer to figure 1 , provide a semiconductor substrate 100, the surface of the semiconductor substrate 100 has a dummy gate structure 110 and an interlayer dielectric layer 120, the dummy gate structure 110 includes a dummy gate dielectric layer 111 and a dummy gate structure located on the surface of the dummy gate dielectric layer 111 The gate electrode layer 112 , and the dummy gate structure 110 penetrates through the thickness of the interlayer dielectric layer 120 .

[0035] refer to figure 2 , remove the dummy gate structure 110 (refer to figure 1 ), forming an opening 113 exposing the surface of the semiconductor substrate 100 .

[0036] refer to image 3 , forming a cover opening 123 (refer to ...

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Abstract

The invention relates to an MOS (Metal-Oxide-Semiconductor) transistor and a formation method thereof. The method comprises the steps of providing a semiconductor substrate, wherein an inter-layer dielectric layer is arranged on a surface of the semiconductor substrate, and an opening is formed in the inter-layer dielectric layer and penetrates through the thickness of the inter-layer dielectric layer; forming grid dielectric layers covering the bottom and a side wall of the opening; forming a first work function layer covering a surface of the grid dielectric layer; performing first ion injection on the first work function layer so that the first work function layer is converted to a second work function layer; and forming a grid electrode layer covering a surface of the second work function layer, wherein the grid electrode layer is flush with the surface of the inter-layer dielectric layer. By the formation method of the MOS transistor, the performance of the MOS transistor is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a MOS transistor and a forming method thereof. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistors are one of the most important components in modern integrated circuits. The basic structure of MOS transistors includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate; located on both sides of the gate structure source and drain regions. The gate structure includes: a gate dielectric layer located on the surface of the semiconductor substrate and a gate electrode layer located on the surface of the gate dielectric layer. The material of the gate dielectric layer is usually oxide, such as SiO 2 . [0003] With the increasing integration of MOS transistors, the voltage and current required for the operation of MOS transistors continue to decrease, and the switching speed of transistors inc...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L21/28H01L21/265
CPCH01L21/265H01L21/28008H01L29/66477
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP
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