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Semiconductor device with trench gate structure and manufacturing method thereof

A trench gate and manufacturing method technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as unrestricted increase in trench density, and achieve the goal of enhancing competitiveness, increasing current density, and reducing production costs. Effect

Active Publication Date: 2019-02-15
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, limited by the process capability, it is impossible to increase the density of the trench without limit

Method used

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  • Semiconductor device with trench gate structure and manufacturing method thereof
  • Semiconductor device with trench gate structure and manufacturing method thereof
  • Semiconductor device with trench gate structure and manufacturing method thereof

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Embodiment Construction

[0025] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the present invention will be thorough and complete.

[0026] It should be noted that when an element is referred to as being “fixed” to another element, it can be directly on the other element or there can also be an intervening element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions are used herein for purposes of illustration only.

[0...

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Abstract

A semiconductor device with a trench gate structure comprises: a drift region (17), a metal electrode (11) on the drift region (17), a trench penetrating from a region below the metal electrode (11) to the drift region (17), a gate oxidation layer (16) on an inner surface of the trench, a polycrystalline silicon gate (13) in the trench, a dielectric layer (12) disposed in the trench and above the polycrystalline silicon gate (13), and a doped region at two sides of the top of the trench.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a semiconductor device with a trench gate structure, and also to a manufacturing method for the semiconductor device with a trench gate structure. Background technique [0002] The traditional insulated gate bipolar transistor (IGBT) with a trench gate structure has been through the compression hole, N-type heavily doped region (NSD) photolithography and overlay size, in order to increase the trench (Trench) density per unit area , to increase the current density of the product. However, limited by the process capability, the trench density cannot be increased without limit. Contents of the invention [0003] Based on this, it is necessary to provide a semiconductor device with a trench gate structure capable of increasing the trench density. [0004] A semiconductor device with a trench gate structure, comprising a drift region, a metal electrode on the drift region, a trench penet...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L29/423H01L29/66H01L21/28
CPCH01L29/739
Inventor 芮强邓小社孙永生
Owner CSMC TECH FAB2 CO LTD
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