Driving source structure of short-pulse heavy-current semiconductor laser for laser scanning

Abstract

The invention relates to a driving source structure of a short-pulse heavy-current semiconductor laser for laser scanning. The structure comprises a pulse signal source, a pulse shaping unit, a power amplification unit, a high frequency switch tube, a high voltage circuit, an energy storage capacitor, a transmission parameter unit, a protective circuit, a laser diode and a sampling resistor. The structure can be used to obtain adjust laser pulse signals with the rising edge of 3.5ns, pulse width of 10ns, peak current of 25A and high repetition rate of 100KHz. The structure is simple in structure, reasonable in structural design, and can meet the requirement that the laser driving source of the short-pulse heavy-current semiconductor laser is small.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser electronic circuits, and in particular relates to a short-pulse high-current semiconductor laser drive source structure for laser scanning. Background technique [0002] In the 1960s, with the development of semiconductor laser manufacturing technology, small and high-power pulsed semiconductor lasers were gradually developed. It has the advantages of small size, light weight, high conversion efficiency, long working life, etc., and has been widely used in laser communication, scanning imaging, laser ranging, biomedical and other fields. The semiconductor laser is a kind of laser with current injection as the excitation method. Its service life and working characteristics depend to a large extent on the design performance of the driving power supply. Compared with the continuous semiconductor laser driving power, the pulsed semiconductor laser driving source not only requires a consta...

AI Technical Summary

Problems solved by technology

[0003] Some domestic research institutions use avalanche transistors and transistor arrays to obtain short-pulse and high-current optical signals. The synchronization of pulses must be considered in the design, resulting in pulse width widening and other characteristics, and the avalanche transistor is in the working limit state, the repetition rate is limited, and the avalanche Transistors are prone to secondary breakdown, which may damage semiconductor lasers

However, it is difficult for general thyristors to generate large currents, and fast GaAs thyristors are still under research, and the technology is not yet mature.

Images