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Cleaning composition for photolithography and method of forming photoresist pattern using the same

A technology for cleaning compositions and photoresist patterns, applied in the field of forming photoresist patterns and cleaning compositions necessary for photoresist patterns, can solve problems affecting final products, increase production costs, etc., and achieve the goal of reducing production costs Effect

Inactive Publication Date: 2017-01-25
YOUNG CHANG CHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In particular, defects caused during the process of forming fine patterns at high cost adversely affect the final product, undesirably increasing production costs

Method used

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  • Cleaning composition for photolithography and method of forming photoresist pattern using the same
  • Cleaning composition for photolithography and method of forming photoresist pattern using the same
  • Cleaning composition for photolithography and method of forming photoresist pattern using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to 3

[0055] Examples 1 to 3: Preparation of cleaning compositions

Embodiment 1

[0057] The compound of chemical formula 1 (wherein R is H, x is 12, y is 7, z is 0) with the compound of chemical formula 1 of 0.01g, the tetrabutylammonium hydroxide of 0.01g and the isopropanol of 1g are mixed with the deionized water of 98.98g, generate Cleansing compositions.

Embodiment 2

[0059] The compound of chemical formula 1 (wherein R is H, x is 12, y is 9, z is 0) with the compound of chemical formula 1 of 0.01g, the tetrabutylammonium hydroxide of 0.01g and the isopropanol of 1g are mixed with the deionized water of 98.98g, generate Cleansing compositions.

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PUM

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Abstract

Disclosed are a cleaning composition for photolithography and a method of forming a photoresist pattern using the same. The cleaning composition, necessary for forming a photoresist pattern having a high aspect ratio, includes water and a compound represented by chemical formula in the abstract wherein R is H or OH, x is an integer selected from 1 to 100, y is an integer selected from 0 to 100, and z is an integer selected from 0 to 100. this cleaning composition is useful for forming a pattern using any of a variety of light sources, and also, even when it is difficult to form a fine pattern as desired using a photoresist alone, a fine pattern can be realized at a desired level of fineness and production costs can be reduced.

Description

technical field [0001] The present invention relates to a cleaning composition for photolithography and a method for forming a photoresist pattern using the composition, more particularly, the present invention relates to a cleaning composition necessary for forming a photoresist pattern with a high aspect ratio, and A method for forming a photoresist pattern using the composition. Background technique [0002] As the demand for electronic equipment with superior performance increases, integrated circuits or system circuits, which are key elements of electronic equipment, require finer precision. Therefore, pattern fineness is regarded as an important factor affecting the precision of integrated circuits or system circuits. [0003] Currently, photolithography is generally used to form fine patterns, and in order to realize the fine patterns, the photoresist pattern must have a high aspect ratio. [0004] When the aspect ratio of the photoresist pattern increases, the patt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/422C11D1/72G03F7/405C11D1/722C11D2111/22C11D3/43C11D3/30G03F7/2004G03F7/2053G03F7/32H01L21/0274
Inventor 李昇勋李昇炫尹相雄咸庆国
Owner YOUNG CHANG CHEM CO LTD
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