Modeling method of microwave GaN power device

Abstract

The invention discloses a modeling method of a microwave GaN power device. The modeling method of the microwave GaN power device comprises the following steps: creating a small signal equivalent circuit model of the GaN power device, obtaining the parameters of the small signal model; according to actually-measured multi-bias scattering parameters, optimizing the parameters of the small signal model, creating a large signal equivalent circuit model of the GaN power device, obtaining the parameters of the large signal model, by using actually-measured multi-bias scattering parameters and large signal characteristic parameters as the goals, tuning and optimizing the parameters of the large signal model; carrying out the modeling for multiple batches of GaN power devices, obtaining the scattering parameters of a process line, and a large signal statistical model. According to the modeling method of the microwave GaN power device, the small signal equivalent circuit model and large signal equivalent circuit model of the GaN power device are created, according to the model parameter statistical characteristics, the scattering parameters of the GaN process line are thus obtained and the large signal characteristic statistical model is created at the same time, therefore, the accurate modeling for the small signal characteristics and the large signal characteristics of a specific process line can be achieved, and the degree of accuracy of the model is improved.

Description

technical field [0001] The invention relates to the technical field of GaN HEMT (gallium nitride high electron mobility transistor) devices, in particular to a modeling method for microwave GaN power devices. Background technique [0002] Gallium Nitride High Electron Mobility Transistor (GaN HEMT) has an extremely important application in microwave and millimeter wave solid-state power circuits due to its high frequency and high power density. The current mainstream method of circuit design is usually based on the device model that describes the characteristics of the device under small-signal working conditions and large-signal working conditions in the form of an equivalent circuit, so the device model is the premise of using the device for circuit design. [0003] However, due to unintentional doping and process parameter fluctuations in the device manufacturing process, it will affect the consistency of device performance, thereby affecting the yield of circuit design. ...

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Problems solved by technology

[0003] However, due to unintentional doping and process parameter fluctuations in the device preparation process, it will affect the consistency of device performance, thereby affecting the yield of circuit design. Therefore, it is necessary to guide the analysis of circuit yield by establishing a circuit model that includes process statistical characteristics.

Traditional device methods are based on the small-signal model or large-signal model parameters of a single GaN device, which cannot analyze the statistical characteristics of multiple GaN power devices prepared by one process line, so the accuracy is insufficient.

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