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Method for cleaning via holes of interconnect structures of semiconductor device structures

A device structure, semiconductor technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc.

Active Publication Date: 2019-06-11
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] While existing interconnect structures and methods of fabricating interconnect structures are generally adequate for their intended purposes, they have not been completely satisfactory in all respects

Method used

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  • Method for cleaning via holes of interconnect structures of semiconductor device structures
  • Method for cleaning via holes of interconnect structures of semiconductor device structures
  • Method for cleaning via holes of interconnect structures of semiconductor device structures

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Embodiment Construction

[0012] The following disclosure provides many different embodiments or examples for implementing different features of the presented subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are examples only and are not intended to limit the invention. For example, in the following description, forming a first component on or on a second component may include an embodiment in which the first component and the second component are formed in direct contact, and may also include an embodiment in which an additional component may be formed between the first component and the second component. An instance of a component such that the first component and the second component may not be in direct contact. In addition, the present invention may repeat reference numerals and / or characters in various embodiments. This repetition is for the sake of simplicity and clarity and does not in itself indicate a r...

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Abstract

Methods for forming semiconductor device structures are provided. The method includes forming a metal layer in the first dielectric layer over the substrate and forming an etch stop layer over the metal layer. The etch stop layer is made of a metal-containing material. The method also includes forming a second dielectric layer over the etch stop layer and removing a portion of the second dielectric layer through an etching process to expose the etch stop layer and form a via hole. The method also includes performing a plasma cleaning process on the via hole and the second dielectric layer, and 2 ) and hydrogen (H 2 ) plasma to perform a plasma cleaning process. Embodiments of the invention also relate to methods for cleaning vias of interconnect structures of semiconductor device structures.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor device structures, and more particularly, to methods for cleaning vias of interconnect structures of semiconductor device structures. Background technique [0002] Semiconductor devices are used in various electronic applications such as personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing an insulating or dielectric layer, a conductive layer, and a layer of semiconducting material over a semiconductor substrate and patterning the individual material layers using photolithography to form circuit components and elements on the material layers. Many integrated circuits are typically fabricated on a single semiconductor wafer, and the individual dies on the wafer are singulated by sawing between the integrated circuits along scribe lines. For example, individual dies are typically individually...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768H01L21/311
CPCH01L21/311H01L21/31111H01L21/31116H01L21/31122H01L21/768H01L21/76811H01L21/76813H01L21/76814H01L21/02068H01L21/31144H01L21/02063H01L21/76883H01L21/0276H01L21/02178
Inventor 郑台新张哲诚陈威廷萧伟印
Owner TAIWAN SEMICON MFG CO LTD