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Insulation gate bipolar transistor

A bipolar transistor, transistor technology, applied in semiconductor devices, electrical components, circuits, etc., can solve the problems of slow turn-off speed and slow carrier discharge, reduce turn-off time, improve withstand voltage characteristics, and easily effect achieved

Inactive Publication Date: 2017-02-15
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] By providing an insulated gate bipolar transistor, the present invention solves the technical problem of the IGBT device in the prior art that the carriers in the non-depleted region are discharged slowly, so the turn-off speed is slow

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  • Insulation gate bipolar transistor
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Embodiment Construction

[0024] The embodiment of the present application provides an insulated gate bipolar transistor, which solves the technical problem of the IGBT device in the prior art that the discharge of carriers in the undepleted region is slow, so the turn-off speed is slow. The technical effect of effectively shortening the trailing current time and reducing the off time is realized.

[0025] In order to solve the above technical problems, the general idea of ​​the technical solution provided by the embodiment of the present application is as follows:

[0026] The present application provides an insulated gate bipolar transistor, including:

[0027] Substrate;

[0028] Gate, emitter and collector located on the substrate; wherein the collector and the emitter are respectively located at both ends of the substrate;

[0029] The super junction structure is located on the side of the substrate close to the collector, so as to deplete excess carriers accumulated on the collector side throug...

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Abstract

The invention discloses an insulation gate bipolar transistor. The insulation gate bipolar transistor comprises a substrate, a gate, an emitter, a collector, and a super-junction structure. The gate, the emitter and the collector are located on the substrate. The collector and the emitter are located on both ends of the substrate respectively. The super-junction structure is located on one side, which is close to the collector, of the substrate, and exhausts excess carriers accumulated on the collector side when the transistor is turned off. The technical problem of slow turn-off caused by slow carrier discharge in a non-depleted region in an insulation gate bipolar transistor in the prior art is solved. The trailing current time is effectively shortened, and the turn-off time is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to an insulated gate bipolar transistor. Background technique [0002] Insulated Gate Bipolar Transistor (IGBT) is widely used in various power electronic systems due to its low on-state voltage drop, high withstand voltage, simple drive control, and easy parallel connection. One of the core devices. Its typical application is as a power switch to control power conversion, so the device needs to meet the switching power control capability at a certain frequency. An ideal switching device requires the ability to be turned on or off instantaneously, but for actual power semiconductor devices, subject to the structural characteristics of the device, there is an inevitable turn-on and turn-off time, which affects the operating frequency of the device. [0003] When the IGBT device is in the on-state, a large number of carriers are stored inside to achieve a better conductance modulation ...

Claims

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Application Information

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IPC IPC(8): H01L29/739H01L29/06
Inventor 陆江
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI