Multi-igbt module comprehensive aging characteristic measurement device

Abstract

The invention provides an integrated multi-IGBT-module multi-aging-characteristic measurement device. The device comprises to-be-measured IGBT modules, an aging characteristic measurement mainboard and a driving circuit, wherein the driving circuit is arranged on the aging characteristic measurement mainboard, the to-be-measured IGBT modules are multiple in number, the multiple to-be-measured IGBT modules are arranged in parallel on a measurement work station of the aging characteristic measurement mainboard, and aging characteristic parameters of the to-be-measured IGBT modules are acquired through the aging characteristic measurement mainboard. The device is advantaged in that multiple aging characteristics of the multiple IGBT modules can be rapidly measured under a same constant temperature environment, the measurement time is shortened to a maximum degree, measurement environment consistency is guaranteed, determination is carried out on the basis of the multiple aging characteristics including saturation conduction voltage reduction, transmission characteristic curve, parasitic capacitance and IGBT switch transient waveform, and thereby accuracy of a measurement result is guaranteed.

Description

technical field [0001] The invention relates to the field of electronics, in particular to a device for measuring comprehensive aging characteristic quantities of multiple IGBT modules. Background technique [0002] As a device for converting and storing electric energy, power converters are widely used in new energy power generation, electric locomotive traction, aviation power supply, electric vehicles and other fields, and IGBT devices are widely used in high-power converter devices. With the advancement of IGBT, its working performance will continue to decrease, and the working life and reliability of IGBT will affect the normal operation of the entire device or system. It is of great significance to the research on IGBT reliability. As one of the key technologies of nature, the research on the measurement technology of IGBT aging characteristics is of great significance to improve the reliability of power converters. At present, there are three main deficiencies in the...

AI Technical Summary

Problems solved by technology

At present, there are three main deficiencies in the measurement of IGBT aging characteristic quantities. One is the simplification of characteristic quantities. The IGBT module is a complex structure composed of IGBT chips, freewheeling diodes, solder layers and bonding wires. A single characteristic quantity can only reflect For the aging condition of a certain part of the IGBT module, if the overall aging state is to be evaluated, a comprehensive evaluation of multiple characteristic quantities is required; second, the measurement conditions are inconsistent, especially the constant IGBT junction temperature, because the IGBT aging characteristic quantity will vary with the junction temperature. Therefore, it is necessary to measure the aging characteristics in a constant temperature environment; third, the sample data is single, and the aging data of a single module is not enough to explain the aging trend of the IGBT module. Therefore, a new IGBT module is urgently needed Aging test technology to achieve simultaneous aging of multiple IGBTs and collect aging data at the same time, making the obtained results more accurate and reliable

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