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Method for Eliminating Defects Caused by Electron Beam Scanning

An electron beam scanning and defect technology, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve problems such as reduced adhesion, affecting hydrophilic and hydrophobic properties, deformation or peeling of photoresist, and achieves improved The effect of yield

Active Publication Date: 2019-05-31
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Application Information

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Problems solved by technology

The material in this state will affect its own hydrophilic and hydrophobic properties, so that during the photolithography process, the adhesion between the photoresist and the underlying material will be reduced, resulting in deformation or peeling of the photoresist

Method used

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  • Method for Eliminating Defects Caused by Electron Beam Scanning

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Embodiment Construction

[0026] In order to make the above objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0027] In this embodiment, the wafer 100 mainly refers to a semiconductor substrate that has not undergone a photolithography process. The first electron beam scanning is performed on the above-mentioned wafer 100 , and this electron beam scanning is a conventional defect scanning, that is, it is used to detect whether there is a defect on the wafer 100 .

[0028] Please refer to image 3 , after the first electron beam scanning, residual charges 200 are often generated on the surface of the wafer 100, and the existence of the residual charges 200 will make the gap between the photoresist and the wafer 100 after the subsequent photolithography process on the wafer 100 The bonding force between them becomes poor, which makes the photor...

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Abstract

The invention provides a method for eliminating defects caused by electron beam scanning. The method is provided with a wafer subjected to a first electron beam scanning process. The wafer subjected to the first electron beam scanning process is subjected to a surface treatment process until a residual charge on the surface of the wafer is eliminated. Specifically, the surface treatment process includes rescanning the wafer of electron beam, placing the wafer in vacuum chamber to static, then heat treating the wafer and cleaning at least one of these two kinds of process on the wafer surface with ionic solutions. According to the method, the residual charge on the wafer surface is eliminated, or the charge can be arranged in order without breaking the wafer structure. The method is simple and convenient, therefore, the yield of the wafer can be effectively improved.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a method for eliminating defects caused by electron beam scanning. Background technique [0002] With the development of integrated circuit technology, semiconductor technology is becoming more and more complex, and many new technologies have been introduced. In order to test the effects of these new technologies, correspondingly, there are more and more applications of electron beam defect scanning. The inspection process steps are increasingly applied by electron beam scanning. The basic principle of using a scanning electron microscope (SEM) to scan a sample with an electron beam for failure analysis is: the sample generates secondary electrons under the excitation of the electron beam emitted by the scanning electron microscope, and the image display and recording system is used to display and record the sample. The secondary electron image, the secondary electron ima...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/26H01L21/324H01L21/02
CPCH01L21/02041H01L21/26H01L21/324
Inventor 范荣伟陈宏璘龙吟蔡坤
Owner SHANGHAI HUALI MICROELECTRONICS CORP
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