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QLED device

A device and quantum dot technology, applied in the field of QLED devices, can solve the problem that quantum dot films affect the luminous efficiency and service life of the device, and achieve the effects of improving electrical properties, improving stability, and improving luminous efficiency and service life.

Active Publication Date: 2017-02-22
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device, which aims to solve the problem that the quantum dot film and interface structure affect the luminous efficiency and service life of the device in the existing QLED device

Method used

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  • QLED device

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Embodiment 1

[0035] A QLED device comprising a substrate, a bottom electrode, a hole injection layer, a hole transport layer, an electron transport layer and a top electrode arranged in sequence, wherein the substrate is a glass substrate, the bottom electrode is ITO, and the thickness 120nm, the hole injection layer is PEDOT:PSS, the thickness is 20nm, the hole transport layer is TFB doped CdZnS / ZnS, and the doping concentration of CdZnS / ZnS is 5%, the hole transport layer The thickness of the electron transport layer is 45nm, the electron transport layer is OXD-7 doped with CdZnSe / ZnS, and the CdZnSe / ZnS doping concentration is 2.8%, the thickness of the electron transport layer is 50nm, the top electrode is Al, in the A layer of 1nm LiF is placed in front of the top electrode.

Embodiment 2

[0037] A QLED device comprising a substrate, a bottom electrode, a hole injection layer, a hole transport layer, an electron transport layer and a top electrode arranged in sequence, wherein the substrate is a glass substrate, the bottom electrode is ITO, and the thickness The hole injection layer is 120nm, the hole injection layer is PEDOT:PSS, the thickness is 20nm, the hole transport layer is TFB doped CdZnS / ZnS, and the doping concentration of CdZnS / ZnS is 3%, while doping 1% of HATCN, the thickness of the hole transport layer is 53nm, the electron transport layer is OXD-7 doped with CdZnSe / ZnS, and the CdZnSe / ZnS doping concentration is 2.8%, while doping 2% Liq, the electron transport The thickness of the layers was 46 nm, the top electrode was Al, and a layer of 1 nm LiF was placed in front of the top electrode.

Embodiment 3

[0039] A QLED device comprising a substrate, a bottom electrode, a hole injection layer, a hole transport layer, an electron transport layer and a top electrode arranged in sequence, wherein the substrate is a glass substrate, the bottom electrode is ITO, and the thickness 120nm, the hole injection layer is PEDOT:PSS, the thickness is 20nm, the hole transport layer is PMMA doped CdZnS / ZnS, and the doping concentration of CdZnS / ZnS is 10%, doped with 40% HATCN, the thickness of the hole transport layer is 45nm, the electron transport layer is PMMA doped with CdZnS / ZnS, and the CdZnSe / ZnS doping concentration is 10%, while doping 20% ​​Liq, the electron transport layer The thickness is 40 nm, the top electrode is Al, and a layer of 1 nm LiF is arranged in front of the top electrode.

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Abstract

The invention provides a QLED device, which comprises a substrate, a bottom electrode, a hole injection layer, a hole transport layer, an electron transport layer and a top electrode which are sequentially arranged, wherein the hole transport layer is a P-type hole transport layer which is formed by quantum dots, a hole transport material and / or an insulating material; the electron transport layer is an n-type electron transport layer formed by quantum dots, an electron transport material and / or an insulating material; and the hole transport layer and the electron transport layer form a heterojunction structure on an interface.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a QLED device. Background technique [0002] Compared with organic fluorescent emitters, quantum dot-based luminescence has the advantages of high color purity, long life, and easy dispersion. In addition, it can be prepared by printing processes. Quantum dot light-emitting diodes (QLEDs) are generally considered to be the next generation of display technology. strong contender. In QLED, the thin film formed by mixing quantum dots with organic matter or polymer forms a phase separation in the microstructure, thus endowing QLED with new properties. In recent years, QLED technology has developed very rapidly. Among them, the efficiency of red, green and blue quantum dot devices is close to the level of OLED, but the electrical properties, stability and life of the device are far below the requirements for use, mainly reflected in the following aspects. [0003] First of all, the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50
CPCH10K50/115H10K50/155H10K50/165
Inventor 向超宇杨一行曹蔚然钱磊
Owner TCL CORPORATION
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