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Field effect transistor ion sensor and system using same

A technology of ion detectors and detectors, which is applied in the direction of instruments, measuring devices, scientific instruments, etc., can solve problems such as difficult to achieve high-sensitivity detectors, and achieve the effect of simple realization

Inactive Publication Date: 2017-02-22
KOREA ELECTRONICS TECH INST
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  • Abstract
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Problems solved by technology

This type of method can detect ion polarity and a large number of ions in the air with a simple circuit configuration, but there may be the following disadvantages: when the charge of the charged particle species is not transported to the antenna metal electrode (due to the formation of Thin insulator of inorganic material), does not generate current flow to ground, because of connection failure due to increased voltage across the resistor, it is difficult to achieve a highly sensitive detector

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  • Field effect transistor ion sensor and system using same
  • Field effect transistor ion sensor and system using same
  • Field effect transistor ion sensor and system using same

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Embodiment Construction

[0046] The present invention can be applied with various changes, and can include various exemplary embodiments, and specific exemplary embodiments will be exemplified by the drawings and explained in the detailed description. However, the invention shall not be limited to the particular exemplary embodiments, and the described aspects are intended to embrace all such alterations, modifications and variations that fall within the scope and novel concepts of the invention.

[0047] Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0048] figure 1 A schematic diagram depicting a FET ion detector according to an exemplary embodiment of the present invention, showing a side view structure of the ion detector 1 of the present invention.

[0049] FET ion detectors according to the present invention can be formed in nanostructures. also, Figure 2a Described figure 1 Schematic of the FET ion dete...

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Abstract

Disclosed are a field effect transistor (FET) ion sensor and a system using the same. The FET ion sensor of the present invention includes a channel formed of a semiconductor and a gate insulating layer disposed on the top of the channel, wherein ion molecules are adsorbed to the surface of the channel, thereby allowing the gate insulating layer to be electrically charged such that the electric conductivity of the channel is changed.

Description

[0001] 【Technical field】 [0002] The invention relates to an FED (Field Effect Transistor, field effect transistor) ion detector and a system using it. [0003] 【Background technique】 [0004] Generally speaking, ion meter can be divided into two types, namely suction type and contact type. Contact ionization meters measure negative ions ionized by radiation emitted by minerals and operate by the radiometric principle (Geiger-Muller tube). In addition, a suction ion meter analyzes the amount of ions by measuring the charge of ions using a planar electrode of an electric field. [0005] The suction ion meter uses two cylindrical (or planar) electrodes of different sizes, and the small-sized cylindrical electrode is set inside the larger cylindrical electrode to form a capacitor structure. In this structure, an electric field is generated by applying a high voltage between two cylindrical electrodes, and ions present in the air passing through the cylindrical electrodes are am...

Claims

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Application Information

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IPC IPC(8): G01N27/414
CPCG01N27/414
Inventor 成又庆李椈宁李敏浩
Owner KOREA ELECTRONICS TECH INST