Reduction furnace for producing polysilicon and method for improving surface cauliflower of polysilicon
A reduction furnace and polysilicon technology, applied in the direction of silicon, etc., can solve the problems of increased power consumption and material consumption, little possibility of parameter adjustment, and increased production costs, so as to reduce power consumption and material consumption, reduce production costs, and uniform deposition Effect
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] Such as figure 1 As shown, this embodiment provides a reduction furnace for producing polysilicon, including a chassis 1, a silicon core 2, a feed nozzle 3 arranged on the chassis 1, and a silicon core base 4, and the silicon core base 4 will be The silicon core 2 is fixed on the chassis 1 , with the chassis 1 as a reference plane, the height of the feeding nozzle 3 is 1 / 2˜1 / 4 of the height of the silicon core base 4 . Specifically, the reduction furnace for producing polysilicon in this embodiment further includes beams 5 for connecting the tops of adjacent silicon cores 2 , and polysilicon is deposited on the silicon cores 2 to form silicon rods. Specifically, the silicon core base 4 in this embodiment adopts a graphite cap.
[0030] In the prior art, with the chassis 1 as the reference plane, the cauliflower material of silicon rods generally appears in the upper 1 / 3 of the overall height of the silicon core 2. The specific reason is that the mixed gas of the materi...
Embodiment 2
[0039] This embodiment provides a method for improving polysilicon surface cauliflower using the reduction furnace in Embodiment 1, comprising the following steps:
[0040] In the early stage of silicon core growth, the molar ratio of trichlorosilane and hydrogen in the raw material gas injected through the feed nozzle is (3.5-4.5):1, and the temperature in the reduction furnace is 1100-1150°C;
[0041] In the early stage of silicon core growth, the deposition surface area of silicon is small, so the flow rate of raw material gas entering the reduction furnace through the feed nozzle should not be too large, thereby reducing the waste of materials. However, if the amount of raw material gas entering the reduction furnace through the feed nozzle in the early stage of silicon core growth is small, the pressure of the raw material gas ejected from the feed nozzle will not be sufficient to make it spray to the top of the beam. In the early stage of silicon core growth, Fusing oc...
Embodiment 3
[0053] This embodiment provides a method for improving polysilicon surface cauliflower using the reduction furnace in Embodiment 1, comprising the following steps:
[0054] In the first hour of the early stage of silicon core growth, the molar ratio of trichlorosilane and hydrogen in the raw material gas injected through the feed nozzle is 4.5:1, and the temperature in the reduction furnace is 1100°C. The molar content of dichlorodihydrosilane in the feed gas is 6%;
[0055] At the 60th hour in the mid-silicon core growth period, the molar ratio of trichlorosilane and hydrogen in the raw material gas injected through the feed nozzle is 2.32:1, and the temperature in the reduction furnace is 1175°C;
[0056] At the 80th hour in the later stage of silicon core growth, the molar ratio of trichlorosilane and hydrogen in the raw material gas injected through the feed nozzle is 2.32:1, and the temperature in the reduction furnace is 1075°C.
[0057] In this embodiment, under the pr...
PUM
Login to View More Abstract
Description
Claims
Application Information
Login to View More